Cited by 43Silicon and Solar Cell TechnologiesSemiconductor materials and interfacesSemiconductor materials and devices

Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering

Yutaka Yoshida, G. Langouche·2015·Lecture Notes in Physics

Integrity signals

Registry

Crossref · 10.1007/978-4-431-55800-2

Cites

Statistics

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Claims the paper makes

We couldn’t retrieve this paper’s full text, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

  • The reason for pores agglomerates may be defects gettering caused by mechanical stress and temperature impact.

    “It seems that the reason for this may be defects gettering caused by mechanical stress and temperature impact [64].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [64]

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Authors
Yoshida, Y., & Langouche, G.
Affiliations
  • Shizuoka Institute of Science and Technology (JP)
  • KU Leuven (BE)
Venue
Lecture Notes in Physics
Published
2015
ISSN
  • 0075-8450 (ISSN-L)
  • 1616-6361
OpenAlex
W2501402384
Cited by
43
References
0
Citations by year
2024: 2 · 2023: 6 · 2022: 5 · 2021: 8 · 2020: 3 · 2019: 5 · 2018: 4 · 2017: 7 · 2016: 3
FWCI
2.46
Type
book
Language
en
Open access
closed
Locations
  • Lecture notes in physics (publishedVersion)
  • CERN Document Server (European Organization for Nuclear Research) (submittedVersion)
  • DIAL (Catholic University of Leuven) (submittedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon and Solar Cell Technologies
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor materials and interfaces
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords
silicon, point defects, impurities, defect dynamics, atomistic modeling, semiconductor defects

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

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