Control of Columnar Grain Microstructure in CSD LaNiO3 Films

May combine two claims.

In this case, processing temperature (650 °C) is lower than melting point (~2200 °C), and coalescence mechanism relates rather to surface or grain boundary diffusion than to hydrodynamic flows inside droplet; however Frenkel's approach is still valid for rough process characterization.

“In our case, the processing temperature (650 °C) is lower than the melting point (~2200 °C), and the coalescence mechanism relates rather to the surface or grain boundary diffusion than to the hydrodynamic flows inside the droplet; however, Frenkel’s approach is still valid for rough process characterization [83].”

• cites [83] Samsonov, 2019, Size Dependence of the Melting Temperature and Mechanisms of the Coalescence/Sintering on the Nanoscale, J. Phys. Conf. Ser. sourceDisputed

  Split into 2 atoms — 0 confirmed, 1 partially supported, 1 disputed, 0 misattributed, 0 unverifiable. Expand the claim to see per-atom verdicts.

  Checked by a reasoning model — may be wrong.

  Experimental — accuracy not yet measured

Classified as probably not a substantial claim.

The electrical properties of LNO are sensitive to mechanical stress, grain boundaries, and pores.

“The electrical properties of LNO are sensitive to mechanical stress, grain boundaries, and pores [1,22].”

• cites [1] Catalano, 2018, Rare-Earth Nickelates RNiO3: Thin Films and Heterostructures, Rep. Prog. Phys. sourcePartly supported

  The indexed record’s Abstract (no page given) says that strain control can modulate the physical properties of rare-earth nickelate heterostructures, which provides some support for sensitivity to mechanical stress. The available passages do not address grain boundaries or pores, or specifically link either to LNO’s electrical properties. (LLM, conf=0.78)

  Experimental — accuracy not yet measured
• cites [22] Zhu, 2013, Effect of Grain Boundary on Electrical Properties of Polycrystalline Lanthanum Nickel Oxide Thin Films, Appl. Phys. A Mater. Sci. Process. sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing).

The resistivity of LNO films can vary from 100 to 10,000 μOhm·cm, depending on preparation techniques.

“The resistivity of LNO films can vary from 100 to 10,000 μOhm·cm, depending on preparation techniques [23,24,25,26].”

• cites [23] Li, 1997, Ben Conductive Metallic LaNiO3 Films from Metallo-Organic Precursors, Thin Solid Film. sourceNot checked — no full text of the source
• cites [24] Vu, 2015, Synthesis and Characterisations of Sol-Gel-Derived LaNiO3 Thin-Film Electrodes on Si Substrates, Int. J. Nanotechnol. sourceNot checked — no full text of the source
• cites [25] Sergeenkov, 2015, Scaling like Behaviour of Resistivity Observed in LaNiO3 Thin Films Grown on SrTiO3 Substrate by Pulsed Laser Deposition, J. Phys. Condens. Matter sourcePartly supported

  The Results and discussion section reports that resistivity varies with film thickness in three LNO films, and the Conclusion gives a residual resistivity of 49 μΩ·cm for one film (page numbers unavailable). The paper does not report a range of 100–10,000 μΩ·cm or attribute that range to different preparation techniques; its films were all made by pulsed laser deposition. (LLM, conf=0.82)

  Experimental — accuracy not yet measured
• cites [26] Zhang, 2008, Preparation of LaNiO3 Thin Films with Very Low Room-Temperature Electrical Resistivity by Room Temperature Sputtering and High Oxygen-Pressure Processing, Thin Solid Film. sourceNot checked — no full text of the source

Classified as probably not a substantial claim.

Columnar grain growth in CSD films is usually caused by heterogeneous nucleation at the film-substrate interface.

“Columnar grain growth in CSD films is usually caused by heterogeneous nucleation at the film–substrate interface [34,35,36,37,38,39,40,41,42,43,44,45].”

• cites [34] Vorotilov, 1999, Sol-Gel Derived Ferroelectric Thin Films: Avenues for Control of Microstructural and Electric Properties, J. Sol-Gel Sci. Technol. sourceNot checked — no full text of the source
• cites [35] Zhang, 2020, Universal In Situ Substitutional Doping of Transition Metal Dichalcogenides by Liquid-Phase Precursor-Assisted Synthesis, ACS Nano sourceNot checked — no full text of the source
• cites [36] Atanova, 2022, Microstructure Analysis of Porous Lead Zirconate–Titanate Films, J. Am. Ceram. Soc. sourceNot checked — no full text of the source
• cites [37] Varghese, 2013, Fabrication of Arrays of Lead Zirconate Titanate (PZT) Nanodots via Block Copolymer Self-Assembly, Chem. Mater. sourceNot checked — no full text of the source
• cites [38] Porotnikov, 2020, Progress and Prospects of Solution-Processed Two-Dimensional Semiconductor Nanocrystals, J. Phys. Chem. C sourceNot checked — no full text of the source
• cites [39] Surekha, 2022, Optical Applications of Sol-Gel Nano-Composites, Mater. Today Proc. sourceNot checked — no full text of the source
• cites [40] Miyazaki, 2004, Preparation and Evaluation of LaNiO3 Thin Film Electrode with Chemical Solution Deposition, J. Eur. Ceram. Soc. sourceNot checked — no full text of the source
• cites [41] Park, J., Lim, Y., Kong, S., Lee, H., and Kim, Y.-B. (2019). Rapid Fabrication of Chemical Solution-Deposited Lanthanum Nickelate Thin Films via Intense Pulsed-Light Process Junghum. Coatings, 9. sourceCould not verify

  The Introduction describes crystallization of chemical solution-deposited films through nucleation and growth, and the Results and Discussion reports grain growth in lanthanum nickelate films. Neither section addresses columnar growth or attributes it to heterogeneous nucleation at the film–substrate interface (searched: columnar, heterogeneous nucleation, film–substrate interface). (LLM, conf=0.76)

  Experimental — accuracy not yet measured
• cites [42] Chen, 2013, Rapid Microwave Annealing of Amorphous Lead Zirconate Titanate Thin Films Deposited by Sol-Gel Method on La NiO3/SiO2/Si Substrates, J. Am. Ceram. Soc. sourceNot checked — no full text of the source
• cites [43] Hoffmann-Eifert, S., and Schneller, T. (2013). Chemical Solution Deposition of Functional Oxide Thin Films, Springer.Not checked yet

  Not checked in the free run.

May combine two claims.

The increase in annealing time from 5 to 10 min slightly decreases resistivity, and this can be caused by improving film crystalline performance.

“However, the increase in annealing time from 5 to 10 min slightly decreases the resistivity value, and this can be caused by improving of the film crystalline performance [1,22].”

• cites [1] Catalano, 2018, Rare-Earth Nickelates RNiO3: Thin Films and Heterostructures, Rep. Prog. Phys. sourceCould not verify

  The indexed entry for Catalano et al. (2018; no page given) describes a review of rare-earth nickelate thin films and ways to tune their properties. The available passages do not address a change in annealing time from 5 to 10 minutes, a resulting resistivity decrease, or improved crystallinity. Searches for those terms found no passage that verifies the claim. (LLM, conf=0.72)

  Experimental — accuracy not yet measured
• cites [22] Zhu, 2013, Effect of Grain Boundary on Electrical Properties of Polycrystalline Lanthanum Nickel Oxide Thin Films, Appl. Phys. A Mater. Sci. Process. sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing).

With a decrease in the Ni3+/Ni2+ ratio, LNO demonstrates semiconducting behavior as a result of band gap appearance.

“With a decrease in the Ni3+/Ni2+ ratio, the LNO demonstrates semiconducting behavior as a result of band gap appearance, e.g., see [87].”

• cites [87] Qiao, 2011, Direct Observation of Ni3+ and Ni2+ in Correlated LaNiO3−δ Films, Europhys. Lett. sourceSupported

Probably not a substantial claim: may not pass S3 (load-bearing).

Another possible reason is different dead layer thickness at interfaces.

“Another possible reason is the different dead layer thickness at the interfaces [63].”

• cites [63] Podgorny, 2019, Dead Layer Thickness Estimation at the Ferroelectric Film-Metal Interface in PZT, Appl. Phys. Lett. sourceSupported

Probably not a substantial claim: may not pass S3 (load-bearing). May combine two claims.

The film resistivity depends strongly both on oxygen deficiency and scattering of charge carriers on the grain boundaries.

“The film resistivity depends strongly both on oxygen deficiency and scattering of charge carries on the grain boundaries (the mean free path of charge carries in LNO is about 30–40 Å [91]).”

• cites [91] Cappelli, 2020, A Laser-ARPES Study of LaNiO3 Thin Films Grown by Sputter Deposition, APL Mater. sourcePartly supported

  In the discussion of Fig. 3 (page unavailable), the paper says oxygen vacancies can limit the carrier mean free path and reports that a shorter mean free path coincides with a resistivity upturn. It does not identify grain-boundary scattering as a strong contributor to resistivity; instead, it says defects alone cannot explain the abrupt thickness dependence and points to fluctuations near the metal–insulator transition. The copy also presents mean free path as thickness-dependent, not as a general 30–40 Å value. (LLM, conf=0.83)

  Experimental — accuracy not yet measured

Probably not a substantial claim: may not pass S3 (load-bearing).

The mean free path of charge carriers in LNO is about 30-40 Å.

“The film resistivity depends strongly both on oxygen deficiency and scattering of charge carries on the grain boundaries (the mean free path of charge carries in LNO is about 30–40 Å [91]).”

• cites [91] Cappelli, 2020, A Laser-ARPES Study of LaNiO3 Thin Films Grown by Sputter Deposition, APL Mater. sourcePartly supported

  The discussion of Fig. 3(b) reports that the ARPES-derived carrier mean free path rises from about 10 to 30 Å in films up to 5 unit cells thick and saturates below about 40 Å in thicker films. The cited 30–40 Å range is therefore reasonable for thicker films, but not for LNO films generally; the paper also cautions that ARPES may give a lower value than transport measurements. (LLM, conf=0.86)

  Experimental — accuracy not yet measured

May combine two claims.

In LNO-cryst-7 min, SAED patterns and HRTEM images show main phase is cubic perovskite LaNiO3 Pm3 ̄m, but SAED patterns contain reflections that do not belong to main phase.

“According to the SAED patterns and HRTEM images (Figure 7), the main phase is cubic perovskite LaNiO3 Pm3¯m, however, SAED patterns contain reflections that do not belong to the main phase.”

May combine two claims.

The sheet resistance of LNO film after annealing for 10 min is Rs = 88.0 ± 3.3 Ohm/square, corresponding to ρ = 680-730 μOhm·cm.

“The sheet resistance of the film after annealing for 10 min is Rs = 88.0 ± 3.3 Ohm/square, which corresponds to the resistivity ρ = 680–730 μOhm·cm.”

May combine two claims.

In LNO-cryst-5 min, the film is crystallized mainly with formation of cubic perovskite LaNiO3 phase, although part of Fourier diffractograms can be solved using both cubic and trigonal LaNiO3.

“According to the high-resolution images (Figure 5c,d), the film is crystallized mainly with the formation of the cubic perovskite LaNiO3 phase (s.g. Pm3¯m), although it should be noted that part of the Fourier diffractograms can be solved using both the cubic and trigonal LaNiO3 (R3¯c).”

May combine two claims.

The film structure after drying at 300 °C is denser in hillocks and less dense with many pores in cavities.

“The film structure is denser in the hillocks, and less dense with many pores in the cavities.”

Probably not a substantial claim: may not pass S1 (asserted), S3 (load-bearing), S4 (based). The quote only partly states this claim.

In LNO-cryst-5 min, hillock areas contain small grains and pores instead of amorphous region.

“However, hillock areas contain small grains and pores instead of the amorphous region in the LNO-cryst-2 min sample.”

May combine two claims.

The sheet resistance of LNO films after annealing for 7 min is Rs = 90.5 ± 4.2 Ohm/square, or ρ = 900-990 μOhm·cm.

“The sheet resistance of the films after annealing for 7 min does not practically change: Rs = 90.5 ± 4.2 Ohm/square, or in terms of resistivity, ρ = 900–990 µOhm·cm.”

May combine two claims.

The sheet resistance of LNO film after annealing for 20 min is 85.6 ± 5.7 Ohm/square, corresponding to ρ = 920-1100 μOhm·cm.

“The sheet resistance of the film after annealing for 20 min is 85.6 ± 5.7 Ohm/square, which in terms of resistivity is ρ = 920–1100 μOhm·cm.”

May combine two claims.

All obtained samples of this series have thickness about 120 nm and are crystallized with formation of columnar grains of 18-72 nm in size.

“All obtained samples of this series have a thickness of about 120 nm and are crystallized with the formation of columnar grains of 18–72 nm in size (Figure 10c).”

The quote only partly states this claim.

Elemental maps show a slight fluctuation of lanthanum and nickel content perpendicular to substrate direction in LNO-cryst-2 min.

“However, the elemental maps show a slight fluctuation of the lanthanum and nickel content, perpendicular to the substrate direction.”

May combine two claims.

The sheet resistance of LNO films annealed 2 min per layer is Rs = 1078-2862 Ohm/square, corresponding to resistivity ρ = 18,000-30,000 μOhm·cm.

“The sheet resistance of the films prepared by the layer-by-layer deposition and annealed for 2 min appeared to be very high Rs = 1078–2862 Ohm/square due to uncompleted crystallization of the film. Taking into account the film thickness, it corresponds to the resistivity ρ = 18,000–30,000 μOhm·cm.”

Probably not a substantial claim: may not pass S3 (load-bearing), S4 (based).

Agglomeration of pores inside LNO film can locally destroy columnar structure.

“Agglomeration of pores inside LNO film can locally destroy the columnar structure.”

May combine two claims.

In LNO-cryst-7 min, average width of columnar grains is 28-48 nm, while equiaxed grains are 8-18 nm.

“The average width of columnar grains is 28–48 nm, while equiaxed grains are 8–18 nm in size.”

May combine two claims.

In LNO-cryst-20 min, porous region destroys uniformity of grain structure: small grains at film surface, columnar grains grow higher.

“This porous region destroys uniformity of the grain structure: small grains are located at the film surface, whereas the columnar grains grow higher (Figure 9a,b).”

May combine two claims.

LNO-cryst-10 min film has strongly pronounced relief; thickness varies from 65-90 nm in relatively flat areas to about 160 nm at hillock tops.

“The film has a strongly pronounced relief; its thickness varies from 65–90 nm in relatively flat areas to about 160 nm at the hillock’s tops.”

May combine two claims.

LNO film annealed 2 min per layer is non-uniform with pronounced surface relief; thickness varies from 100 to 180 nm.

“The film is non-uniform with a pronounced surface relief; the thickness varies from 100 to 180 nm (Figure 1a).”

Probably not a substantial claim: may not pass S3 (load-bearing).

In LNO-cryst-5 min, a striation is traced parallel to the substrate plane in STEM HAADF images.

“A striation is traced parallel to the substrate plane in STEM HAADF images (Figure 5b) characterized by z-contrast and density contrast.”

May combine two claims.

These extra phases were not detected by X-ray phase analysis or localized by EDX and HRTEM.

“However, these phases were not detected by X-ray phase analysis or localized by elemental analysis (EDX) and HRTEM.”

May combine two claims.

In LNO-cryst-10 min, SAED pattern strong reflexes belong to LaNiO3 phase, with very weak reflexes at 3.44 and 3.17 Å, and a pair at 2.83 Å.

“In the SAED pattern (Figure 8b), all strong reflexes belong to the LaNiO3 (s.g. Pm3¯m) phase, however, there are a couple of very weak reflexes similar to the previous film: 3.44 and 3.17 Å. In addition, a pair of reflexes is observed, corresponding to 2.83 Å.”

May combine two claims.

According to electron diffraction patterns, LNO-anneal-90 min sample crystallizes with formation of cubic phase, but several patterns showed single reflections corresponding to 3.27, 2.43, 1.68, and 1.46 Å.

“According to the obtained electron diffraction patterns, the sample crystallizes with the formation of a cubic phase (s.g. Pm3¯m), however, several electron diffraction patterns showed single reflections corresponding to interplanar distances of 3.27 Å, 2.43 Å, 1.68 Å, and 1.46 Å.”

May combine two claims.

LNO films with additional annealing have practically no pores in bulk and have a perfect columnar structure.

“In contrast to the samples with crystallization of each layer for 10 and 20 min from the previous series, the LNO films in this series have practically no pores in the bulk and have a perfect columnar structure.”

May combine two claims.

In each layer, top part is slightly enriched with La, bottom part enriched with Ni.

“A region at the top part of each layer is slightly enriched with La, whereas at the bottom part it is enriched with Ni.”

May combine two claims.

STEM images show a chain of pores at film/substrate interface of 4-12 nm in size, as well as single pores in film bulk.

“The STEM images clearly show a chain of pores at the film/substrate interface of 4–12 nm in size, as well as single pores in the film bulk (Figure 11a).”

May combine two claims.

The 2-3 nm LNO layer adjacent to SiO2 is saturated with lanthanum, and above it there is a zone enriched in nickel with thickness about 7 nm.

“In addition, the 2–3 nm LNO layer adjacent to SiO2 is saturated with lanthanum, and above it there is a zone enriched in nickel with a thickness of about 7 nm (Figure 11b).”

May combine two claims.

Both PZT and LNO layers are quite dense and demonstrate a columnar structure.

“Both layers are quite dense and demonstrate a columnar structure.”

May combine two claims.

Long post annealing of LNO films improves crystalline performance, however chains of pores are still observed inside film.

“Long post annealing of LNO films improves crystalline performance, however, chains of pores are still observed inside the film.”

May combine two claims.

Additional annealing for 30-90 min does not completely eliminate compositional inhomogeneity, but gives well-packed columnar grains.

“Regardless, additional annealing for 30–90 min does not completely eliminate compositional inhomogeneity, however, it gives well-packed columnar grains.”

May combine two claims.

Crystalline regions in 2-min film contain fine randomly orientated crystals and many pores between them.

“Crystalline regions contain fine randomly orientated crystals and many pores between them.”

May combine two claims.

Film crystallization completes after 5 min annealing with formation of column grains and presence of small equiaxed grains at peak tops.

“Film crystallization completes after 5 min annealing with the formation of column grains and presence of small equiaxed grains at the peak tops (Figure 15b).”

May combine two claims.

LNO film prepared at 2-min annealing consists of alternating amorphous and polycrystalline areas, corresponding to peaks and valleys in film relief.

“LNO film prepared at 2-min annealing consists of alternating amorphous and polycrystalline areas, corresponding to peaks and valleys in the film relief (Figure 15a).”

Probably not a substantial claim: may not pass S3 (load-bearing). May combine two claims.

Generally, PZT-LNO and PZT-Pt capacitors have similar electrical properties, except for asymmetry and a somewhat higher value of coercive field in case of Pt electrode.

“Generally, PZT-LNO and PZT-Pt capacitors have similar electrical properties, except for asymmetry and a somewhat higher value of coercive field in the case of Pt electrode.”

May combine two claims.

The increase in annealing time of each layer up to 20 min or additional annealing at 30-90 min led to a slight increase in resistivity.

“The increase in annealing time of each layer up to 20 min or additional annealing of the film at 30–90 min led to a slight increase in resistivity, see Figure 12.”

May combine two claims.

If silicon wafer is used as a substrate, the ρ value of LNO increases: minimum obtained ρ values increase by 3-4 times-ρ = 420 μOhm·cm for PLD, and ρ~700 μOhm·cm for the CSD method (this work).

“Unfortunately, if silicon wafer is used as a substrate, the ρ value of LNO increases: the minimum obtained ρ values increase by 3–4 times—ρ = 420 µOhm·cm—for PLD [27], and ρ~700 µOhm·cm for the CSD method [this work].”

• cites [27] He, 2016, Effect of Substrate Temperature on Microstructure and Electrical Properties of LaNiO3 Films Grown on SiO2/Si Substrates by Pulsed Laser Deposition under a High Oxygen Pressure, Appl. Phys. A Mater. Sci. Process. sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing).

LNO is the most relevant electrode material for oxide electronics due to relatively low electrical resistivity (100-1000 μOhm·cm) and lattice parameters close to many ferroelectric and multiferroic perovskites.

“LNO is the most relevant electrode material for oxide electronics due to a relatively low electrical resistivity (100–1000 μOhm·cm) and lattice parameters close to those of many ferroelectric and multiferroic perovskites [10,11,12,13].”

• cites [10] Pontes, 2014, Structural, Dielectric, Ferroelectric and Optical Properties of PBCT, PBST and PCST Complex Thin Films on LaNiO3 Metallic Conductive Oxide Layer Coated Si Substrates by the CSD Technique, J. Alloys Compd. sourceNot checked — no full text of the source
• cites [11] Goodenough, 2007, Orbital Ordering in Orthorhombic Perovskites, J. Mater. Chem. sourceNot checked — no full text of the source
• cites [12] Rajeev, 1991, Low-Temperature Electronic Properties of a Normal Conducting Perovskite Oxide (LaNiO3), Solid State Commun. sourceNot checked — no full text of the source
• cites [13] Amoresi, 2016, Role of Morphological Characteristics on the Conductive Behavior of LaNiO3 Thin Films, Ceram. Int. sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing). May combine two claims.

Stoichiometric LNO films are characterized by metallic behavior, while oxygen-deficient LaNiO3-δ films exhibit a metal-insulator transition.

“Stoichiometric films are characterized by metallic behavior, while oxygen-deficient LaNiO3-δ films exhibit a metal–insulator transition [19].”

• cites [19] Zhu, 2011, Microstructure and Transport Properties of Solgel Derived Highly (100)-Oriented Lanthanum Nickel Oxide Thin Films on SiO2/Si Substrate, J. Cryst. Growth sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing).

The dependence of conductivity on oxygen deficiency δ is attributed to the change in nickel valence from Ni3+ to Ni2+ with increasing δ.

“The dependence of conductivity on oxygen deficiency δ is attributed to the change in nickel valence from Ni3+ to Ni2+ with increasing δ [19,20,21].”

• cites [19] Zhu, 2011, Microstructure and Transport Properties of Solgel Derived Highly (100)-Oriented Lanthanum Nickel Oxide Thin Films on SiO2/Si Substrate, J. Cryst. Growth sourceNot checked — no full text of the source
• cites [20] Tsubouchi, 2008, Epitaxial Growth and Surface Metallic Nature of LaNiO3 Thin Films, Appl. Phys. Lett. sourceNot checked — no full text of the source
• cites [21] Escote, 2003, Microstructural and Transport Properties of LaNiO3–δ Films Grown on Si (111) by Chemical Solution Deposition, Thin Solid Film. sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing).

CSD is widely used for deposition of LNO films on substrates of various materials, size, and shape, including standard silicon wafers.

“For this reason, chemical solution deposition (CSD) is widely used for the deposition of LNO films on substrates of various materials, size, and shape, including standard silicon wafers [15,19,31].”

• cites [15] Duan, 2018, Growth of Highly C-Axis Oriented LaNiO3 Films with Improved Surface Morphology on Si Substrate Using Chemical Solution Deposition and Rapid Heat Treatment Process, Ceram. Int. sourceNot checked — no full text of the source
• cites [19] Zhu, 2011, Microstructure and Transport Properties of Solgel Derived Highly (100)-Oriented Lanthanum Nickel Oxide Thin Films on SiO2/Si Substrate, J. Cryst. Growth sourceNot checked — no full text of the source
• cites [31] Haavik, C., and Rørvik, P.M. (2013). Chemical Solution Deposition of Functional Oxide Thin Films, Springer. sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing). May combine two claims.

A slight fluctuation of La and Ni content in perpendicular to interface direction is observed and suggests some interaction of deposited layer with environment during film formation.

“A slight fluctuation of La and Ni content in the perpendicular to the interface direction is observed and suggests some interaction of the deposited layer with the environment during film formation.”

Probably not a substantial claim: may not pass S3 (load-bearing).

A decrease in film thickness while maintaining same number of layers may indicate compaction of structure.

“A decrease in the film thickness while maintaining the same number of layers may indicate a compaction of the structure.”

Probably not a substantial claim: may not pass S3 (load-bearing).

High quality epitaxial LNO films with resistivity as low as ~100 μOhm·cm can be prepared on single-crystal substrates with similar lattice parameters by MBE, PLD, or PVD.

“High quality epitaxial LNO films with resistivity as low as ~100 μOhm·cm can be prepared on single-crystal substrates with similar lattice parameters (LaAlO3, SrTiO3) by molecular beam epitaxy (MBE), pulsed laser deposition (PLD), or physical vapor deposition (PVD) [27,28,29,30].”

• cites [27] He, 2016, Effect of Substrate Temperature on Microstructure and Electrical Properties of LaNiO3 Films Grown on SiO2/Si Substrates by Pulsed Laser Deposition under a High Oxygen Pressure, Appl. Phys. A Mater. Sci. Process. sourceNot checked — no full text of the source
• cites [28] Zhu, 2013, Effect of Composition and Strain on the Electrical Properties of LaNiO3 Thin Films, Appl. Phys. Lett. sourceNot checked — no full text of the source
• cites [29] Berini, 2007, High Temperature Ellipsometry of the Conductive Oxide LaNiO3, J. Appl. Phys. sourceNot checked — no full text of the source
• cites [30] Ferrater, 2000, High-Quality Epitaxial LaNiO3 Thin Films on SrTiO3(100) and LaAlO3(100), Appl. Phys. A Mater. Sci. Process. sourceNot checked — no full text of the source

May combine two claims.

Interplanar distances 2.43 and 1.46 Å may indicate presence of residual amount of NiO, while 3.27 and 1.68 Å correspond to La2O3 often observed in LNO films obtained by CSD.

“Interplanar distances of 2.43 Å and 1.46 Å may indicate the presence of a residual amount of NiO (s.g. Fm3¯m, ICSD ID 9866, d = 2.43 and 1.49 Å), while 3.27 Å and 1.68 Å correspond to La2O3 (s.g. Ia3¯, PDF 00-022-0369, d= 3.27, 1.70, 1.66 Å), often observed in LNO films obtained by CSD [15,57,58].”

• cites [15] Duan, 2018, Growth of Highly C-Axis Oriented LaNiO3 Films with Improved Surface Morphology on Si Substrate Using Chemical Solution Deposition and Rapid Heat Treatment Process, Ceram. Int. sourceNot checked — no full text of the source
• cites [57] Suzuki, 2007, Deposition of Highly Oriented Lanthanum Nickel Oxide Thin Film on Silicon Wafer by CSD, J. Eur. Ceram. Soc. sourceNot checked — no full text of the source
• cites [58] Norman, 1999, Preparation of the Single-Phase Perovskite LaNiO3, J. Mater. Process. Technol. sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing).

Some authors have demonstrated a columnar grain structure of LNO films using PLD and CSD techniques.

“Some authors have demonstrated a columnar grain structure of LNO films using PLD [29] and CSD [15,22,40] techniques.”

• cites [29] Berini, 2007, High Temperature Ellipsometry of the Conductive Oxide LaNiO3, J. Appl. Phys. sourceNot checked — no full text of the source
• cites [15] Duan, 2018, Growth of Highly C-Axis Oriented LaNiO3 Films with Improved Surface Morphology on Si Substrate Using Chemical Solution Deposition and Rapid Heat Treatment Process, Ceram. Int. sourceNot checked — no full text of the source
• cites [22] Zhu, 2013, Effect of Grain Boundary on Electrical Properties of Polycrystalline Lanthanum Nickel Oxide Thin Films, Appl. Phys. A Mater. Sci. Process. sourceNot checked — no full text of the source
• cites [40] Miyazaki, 2004, Preparation and Evaluation of LaNiO3 Thin Film Electrode with Chemical Solution Deposition, J. Eur. Ceram. Soc. sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing). May combine two claims.

The extra reflections corresponding to dhkl = 2.44, 1.54 Å may refer to nickel oxide NiO, whereas dhkl = 3.44, 3.15 Å may indicate lanthanum oxide phase La2O3 or other phases.

“The reflections corresponding to dhkl = 2.44, 1.54 Å may refer to the nickel oxide NiO (s.g. Fm3¯m), whereas dhkl = 3.44, 3.15 Å may indicate the presence of the lanthanum oxide phase La2O3 (s.g. P3¯m1) or other phases.”

Classified as probably not a substantial claim. May combine two claims.

The main strategy of columnar grain growth in CSD films is a choice of the substrate with a close lattice constant or introducing an intermediate seeding layer whose structure decreases the Gibbs free energy ΔGv at the interface.

“For this reason, the main strategy of columnar grain growth in CSD films is a choice of the substrate with a close lattice constant or introducing an intermediate seeding layer whose structure decreases the Gibbs free energy ΔGv at the interface [32,46,47].”

• cites [32] Schneller, T., Waser, R., Kosec, M., and Payne, D. (2013). Chemical Solution Deposition of Functional Oxide Thin Films, Springer. sourceNot checked — no full text of the source
• cites [46] Schwartz, 1999, Control of Microstructure and Orientation in Solution-Deposited BaTiO3 and SrTiO3 Thin Films, J. Am. Ceram. Soc. sourceNot checked — no full text of the source
• cites [47] Zhigalina, 2006, Influence of Crystallization Process on Structural State of CSD BST Thin Films, Ferroelectrics sourceNot checked — no full text of the source

Classified as probably not a substantial claim. May combine two claims.

The defective structure causes enhanced resistivity, and it is not optimal for growing on the ferroelectric perovskite layer or other functional heterostructures.

“The defective structure causes enhanced resistivity, and it is not optimal for growing on the ferroelectric perovskite layer or other functional heterostructures [22].”

• cites [22] Zhu, 2013, Effect of Grain Boundary on Electrical Properties of Polycrystalline Lanthanum Nickel Oxide Thin Films, Appl. Phys. A Mater. Sci. Process. sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing).

Interplanar distances of 3.17 and 2.83 Å can correspond to tetragonal La2NiO4 phase.

“Interplanar distances of 3.17 and 2.83 Å can correspond to the tetragonal La2NiO4 phase (s.g. I4/mmm).”

Probably not a substantial claim: may not pass S3 (load-bearing).

In case of impenetrable interfaces, accumulation of oxygen vacancies can stimulate electrons injection with formation of induced p-n junctions.

“In the case of impenetrable interfaces, the accumulation of oxygen vacancies can stimulate electrons injection with the formation of induced p-n junctions [62].”

• cites [62] Podgorny, 2022, Effect of Metal Electrodes on the Steady-State Leakage Current in PZT Thin Film Capacitors, J. Electroceramics sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing).

Oxygen deficiency is the reason for resistivity increase attributed to change in nickel valence.

“As it is known, oxygen deficiency is the reason for the resistivity increase attributed to the change in nickel valence [19,20,21,59].”

• cites [19] Zhu, 2011, Microstructure and Transport Properties of Solgel Derived Highly (100)-Oriented Lanthanum Nickel Oxide Thin Films on SiO2/Si Substrate, J. Cryst. Growth sourceNot checked — no full text of the source
• cites [20] Tsubouchi, 2008, Epitaxial Growth and Surface Metallic Nature of LaNiO3 Thin Films, Appl. Phys. Lett. sourceNot checked — no full text of the source
• cites [21] Escote, 2003, Microstructural and Transport Properties of LaNiO3–δ Films Grown on Si (111) by Chemical Solution Deposition, Thin Solid Film. sourceNot checked — no full text of the source
• cites [59] Gayathri, 1998, Electronic Conduction in LaNiO3−δ: The Dependence on the Oxygen Stoichiometry δ, J. Phys. Condens. Matter sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing).

The reason for pores agglomerates may be defects gettering caused by mechanical stress and temperature impact.

“It seems that the reason for this may be defects gettering caused by mechanical stress and temperature impact [64].”

• cites [64] Yoshida, Y., and Langouche, G. (2015). Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering, Springer. sourceNot checked — no full text of the source

May combine two claims.

PZT-Pt interfaces block oxygen vacancies leading to their accumulation near interface, whereas PZT-LNO and PZT-Hg interfaces are transparent for them.

“PZT-Pt interfaces blocks oxygen vacancies that leads to their accumulation near the interface, whereas PZT-LNO and PZT-Hg interfaces are transparent for them.”

• cites [60] Holzlechner, 2014, Oxygen Vacancy Redistribution in PbZrxTi1−xO3 (PZT) under the Influence of an Electric Field, Solid State Ion. sourceNot checked — no full text of the source

May combine two claims.

The columnar structure of film prepared at 10 min annealing contains less internal boundaries, and this can affect free path of charge carriers.

“The columnar structure of the film prepared at the 10 min annealing contains less internal boundaries, and this can affect the free path of charge carriers.”

May combine two claims. The quote only partly states this claim.

Sintering via coalescence of individual crystals is a time-dependent process and requires more than 5 min annealing of each layer.

“Thus, sintering via coalescence of individual crystals is a time-dependent process and, in the case of LNO film, requires more than 5 min annealing of each layer (see Figure 16).”

Probably not a substantial claim: may not pass S3 (load-bearing), S4 (based).

A similar self-assembly process is the reason for the regular wavy shape surface in LNO films.

“We suggest that a similar self-assembly process is the reason for the regular wavy shape surface in LNO films.”

Probably not a substantial claim: may not pass S3 (load-bearing). May combine two claims.

LNO in stoichiometric composition demonstrates metallic conductivity, with holes as the dominant charge carriers, although Ni has a formal valence of 3+.

“It is known that LNO in stoichiometric composition demonstrates metallic conductivity (the dominant charge carriers contributing to transport in LaNiO3 are holes), although Ni has a formal valence of 3+ [59].”

• cites [59] Gayathri, 1998, Electronic Conduction in LaNiO3−δ: The Dependence on the Oxygen Stoichiometry δ, J. Phys. Condens. Matter sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing).

Resistivity can change by an order of magnitude or more when δ deviates from zero by as little as 0.1.

“For instance, resistivity can change by an order of magnitude or more when δ deviates from zero by as little as 0.1 [86].”

• cites [86] Malashevich, 2015, First-Principles Study of Oxygen-Deficient LaNiO3 Structures, Phys. Rev. B sourceNot checked — no full text of the source

May combine two claims.

Film thinning causes a mass transfer increase via CH3COOH evaporation, which promotes interaction between acetate species.

“Film thinning causes a mass transfer increase via CH3COOH evaporation, which promotes interaction between acetate species.”

Classified as probably not a substantial claim.

According to Frenkel theory, coalescence kinetics of two identical touching droplets is governed by viscous flowing and depends on their surface energy, viscosity, and size.

“According to the pioneered Frenkel theory, the coalescence kinetics of two identical touching droplets is governed by viscous flowing and depends on their surface energy, viscosity, and size [82].”

• cites [82] Frenkel, 1945, Viscous Flow of Crystalline Bodies under the Action of Surface Tension, J. Phys.Not checked — no full text of the source

May combine two claims.

The described self-seeding process via coalescence of small grains through layer-by-layer deposition and annealing is unique and permits growth of films with column grains on any substrates.

“The described self-seeding process via coalescence of small grains through the layer-by-layer deposition and annealing is unique and permits to grow films with column grains on any substrates.”

May combine two claims.

As a result of viscosity increase, liquid outflow stops, and further film thinning occurs only due to liquid evaporation.

“As a result of viscosity increase, liquid outflow stops, and further film thinning occurs only due to liquid evaporation.”

May combine two claims.

In case of hard-baking at 300-450 °C, intermediate phases are created and final annealing at 650 °C gives multiphase structure.

“In contrast, in the case of hard-baking at 300–450 °C, intermediate phases are created and final annealing at 650 °C gives the multiphase structure, as it was mentioned before [71].”

• cites [71] Atanova, 2021, Chemical and Phase Inhomogeneity in LaNiO3 Electrodes Prepared by Chemical Solution Deposition, Ferroelectrics sourceNot checked — no full text of the source

May combine two claims.

Soft-baking at a low temperature ~200 °C is a key processing step, as hard-baking at higher temperature gives creation of various undesirable phases.

“Thus, soft-baking at a low temperature ~ 200 °C is a key processing step, as hard-baking at higher temperature gives the creation of various undesirable phases.”

Probably not a substantial claim: may not pass S3 (load-bearing).

Defect chemistry is most responsible for electrical properties of PZT films, including leakage currents, fatigue, retention, imprint.

“Defect chemistry is most responsible for the electrical properties of PZT films, including leakage currents, fatigue, retention, imprint, etc. [61].”

• cites [61] Zhang, 2009, Effects of Electrodes on the Properties of Sol–Gel PZT Based Capacitors in FeRAM, Solid. State. Electron. sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing).

Oxygen deficiency in LaNiO3-δ leads to the creation of Ni2+ ions, significantly affecting conductivity.

“Oxygen deficiency in LaNiO3-δ leads to the creation of Ni2+ ions, significantly affecting the conductivity [59,86].”

• cites [59] Gayathri, 1998, Electronic Conduction in LaNiO3−δ: The Dependence on the Oxygen Stoichiometry δ, J. Phys. Condens. Matter sourceNot checked — no full text of the source
• cites [86] Malashevich, 2015, First-Principles Study of Oxygen-Deficient LaNiO3 Structures, Phys. Rev. B sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing).

Usually, creation of the columnar grain structure in thin films is governed by heterogeneous nucleation at the substrate or seed layer.

“Usually, creation of the columnar grain structure in thin films is governed by hete ogeneous nucleation at the substrate or seed layer, e.g., see [46].”

• cites [46] Schwartz, 1999, Control of Microstructure and Orientation in Solution-Deposited BaTiO3 and SrTiO3 Thin Films, J. Am. Ceram. Soc. sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S2 (checkable).

The CSD technique of column grain LNO preparation is a good choice for different applications in electronics.

“As the PLD technique is not appropriate for deposition on standard silicon wafer, it seems that the CSD technique of column grain LNO preparation is a good choice for different applications in electronics.”

• AssumptionRests on an assumption: The PLD technique is not appropriate for deposition on standard silicon wafer.

May combine two claims.

LNO film with a columnar structure is an ideal bottom electrode for ferroelectric PZT capacitors with excellent electrical performance, as it provides epitaxial growth of column perovskite grains in ferroelectric film without any disturbing layer at the LNO-PZT interface.

“LNO film with a columnar structure is an ideal bottom electrode for ferroelectric PZT capacitors with excellent electrical performance, as it provides epitaxial growth of column perovskite grains in ferroelectric film without any disturbing layer at the LNO–PZT interface.”

Probably not a substantial claim: may not pass S3 (load-bearing).

The reported resistivity at room temperature is ρ = 380 μOhm·cm for powder bulk samples.

“The reported values of resistivity at room temperature are ρ ≈ 90 µOhm·cm for single crystal bulk LNO [88] and ρ = 380 µOhm·cm for powder bulk samples [89].”

• cites [89] Xu, 1993, Resisitivity, Thermopower, and Susceptibility of RNiO3 (R = La,Pr), Phys. Rev. B sourceNot checked — no full text of the source

Probably not a substantial claim: may not pass S3 (load-bearing). May combine two claims.

The Zr/Ti ratio 52/48 is near the morphotropic phase boundary, where PZT demonstrates enhanced piezoelectric and ferroelectric performance.

“The Zr/Ti ratio was chosen as 52/48, near the morphotropic phase boundary, where PZT demonstrates enhanced piezoelectric and ferroelectric performance [94].”

• cites [94] Jaffe, B., Cook, W.R., and Jaffe, H. (1971). Piezoelectric Ceram, Elsevier.Not checked yet

  Not checked in the free run.