Effect of Grain Boundary on Electrical Properties of Polycrystalline Lanthanum Nickel Oxide Thin Films
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The electrical properties of LNO are sensitive to mechanical stress, grain boundaries, and pores.
“The electrical properties of LNO are sensitive to mechanical stress, grain boundaries, and pores [1,22].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [22]
Some authors have demonstrated a columnar grain structure of LNO films using PLD and CSD techniques.
“Some authors have demonstrated a columnar grain structure of LNO films using PLD [29] and CSD [15,22,40] techniques.”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [22]
The defective structure causes enhanced resistivity, and it is not optimal for growing on the ferroelectric perovskite layer or other functional heterostructures.
“The defective structure causes enhanced resistivity, and it is not optimal for growing on the ferroelectric perovskite layer or other functional heterostructures [22].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [22]
The increase in annealing time from 5 to 10 min slightly decreases resistivity, and this can be caused by improving film crystalline performance.
“However, the increase in annealing time from 5 to 10 min slightly decreases the resistivity value, and this can be caused by improving of the film crystalline performance [1,22].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [22]
Cited by
Sorted by citations
Control of Columnar Grain Microstructure in CSD LaNiO3 Films
Atanova, A. V., Seregin, D. S., Zhigalina, O. M., Khmelenin, D. N., Orlov, G. A., Turkina, D. I., Sigov, A. S., & Vorotilov, K. A. (2023) · Molecules · doi:10.3390/molecules28041938 · Cited by 5 · see citing works
- Authors
- Zhu, M. W., Wang, Z. J., Chen, Y. N., Wang, H. L., & Zhang, Z. D.
- Affiliations
- Chinese Academy of Sciences (CN)
- Corresponding author
- Wang, Z. J.
- Venue
- Applied Physics A
- Published
- 2012-12-04
- Volume
- 112
- Issue
- 4
- Pages
- 1011-1018
- ISSN
- 0947-8396 (ISSN-L)
- 1432-0630
- OpenAlex
- W2007530926
- Cited by
- 17
- References
- 0
- Citations by year
- 2025: 2 · 2024: 1 · 2023: 1 · 2022: 2 · 2021: 1 · 2020: 1 · 2018: 3 · 2017: 1 · 2016: 1 · 2015: 2 · 2014: 2
- FWCI
- 0.49
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.springer.com/tdm (tdm)
- Locations
- Applied Physics A (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic and transport properties of perovskites and related materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electrical and Thermal Properties of Materials
- Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
- Keywords
- lanthanum nickel oxide, thin films, grain boundaries, electrical transport, magnetoresistance, weak localization, strong localization, variable range hopping, Anderson localization, metal-insulator transition, electron-phonon scattering, electron-electron scattering, residual resistivity, sol-gel thin films, sol concentration
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
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