The DOI matches its Crossref record; 36 of the 36 references it cites were found in a registry or an index.
L-Shaped Schottky Barrier MOSFET for High Performance Analog and RF Applications
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In the citing paper
“High transconductance also increases the DC intrinsic gain of the device, which is desirable in analog applications [23].”
From Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET (2023) · cites this paper as [23]
Citations
Cites
Li, R., Wu, D., Liu, Y., Yu, L., Yu, Z., & Ye, H. (2017) · Nanoscale Research Letters · doi:10.1186/s11671-016-1773-2 · Cited by 620
Controlling Short-Channel Effects in Deep-Submicron SOI MOSFETs for Improved Reliability: A Review
Chaudhry, A., & Kumar, M. J. (2004) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2004.824359 · Cited by 493
Skotnicki, T., Hutchby, J. A., King, T., Wong, H.-S. P., & Boeuf, F. (2005) · IEEE Circuits and Devices Magazine · doi:10.1109/mcd.2005.1388765 · Cited by 453
Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime
Kedzierski, J. T., Xuan, P., Anderson, E. H., Bokor, J., King, T., & Hu, C. C. (2002) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2000.904258 · Cited by 216
Lepselter, M. P., & Sze, S. M. (1968) · Proceedings of the IEEE · doi:10.1109/proc.1968.6618 · Cited by 161
High-Speed Schottky-Barrier pMOSFET With $f_T = 280 hbox GHz$
Fritze, M., Chen, C. L., Calawa, S. D., Yost, D., Wheeler, B., Wyatt, P. W., Keast, C. L., Snyder, J., & Larson, J. (2004) · IEEE Electron Device Letters · doi:10.1109/led.2004.826294 · Cited by 99
Jang, M., Kim, Y., Shin, J., Lee, S., & Park, K. (2004) · Applied Physics Letters · doi:10.1063/1.1645665 · Cited by 93
Asymmetric Schottky Tunneling Source SOI MOSFET Design for Mixed-Mode Applications
Jhaveri, R., Nagavarapu, V., & Woo, J. C. S. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2008.2008161 · Cited by 90
On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs
Knoch, J., Zhang, M., Mantl, S., & Appenzeller, J. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.877262 · Cited by 84
A High-Performance Source Engineered Charge Plasma-Based Schottky MOSFET on SOI
Bashir, F. I., Loan, S. A., Rafat, M., Alamoud, A. R. M., & Abbasi, S. A. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2464112 · Cited by 80
Self-citation
Research works printed but not linked: 2
- Snyder JP (1996) The physics and technology of platinum silicide source and drain field effect transistors. Ph.D. dissertation, Dept. Elect. Electron., Stanford Univ., Stanford, CA, USA
- Roy A, Mitra R, Mondal A, Kundu A (2021) Analog/RF and Power Performance Analysis of an Underlap DG AlGaN/GaN Based High-K Dielectric MOS-HEMT. SILICON 14:221–228
Cited by
Das, A., Rewari, S., Kanaujia, B. K., Deswal, S. S., & Gupta, R. S. (2023) · Physica Scripta · doi:10.1088/1402-4896/acde16 · Cited by 49
Metadata
- Authors
- Rashid, S., Bashir, F., Khanday, F. A., & Beigh, M. R.
- Affiliations
- University of Kashmir (IN)
- Corresponding author
- Khanday, Farooq A.
- Venue
- Silicon
- Published
- 2022-07-14
- Volume
- 15
- Issue
- 1
- Pages
- 205-215
- ISSN
- 1876-990X (ISSN-L)
- 1876-9918
- OpenAlex
- W4285388963
- Cited by
- 7
- References
- 36
- Citations by year
- 2026: 1 · 2025: 2 · 2024: 2 · 2023: 2
- FWCI
- 0.41
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.springernature.com/gp/researchers/text-and-data-mining (tdm)
- www.springernature.com/gp/researchers/text-and-data-mining (vor)
- Locations
- Silicon (publishedVersion)
- Funders
- University Grants Commission, Govt. of India (190510736394)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Semiconductor materials and interfaces
- Keywords
- Schottky barrier MOSFET, double-gate transistors, low work function metals, HfO2 gate oxide, short-channel effects, subthreshold swing, RF performance, analog performance, inverter delay, two-dimensional device simulation
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
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Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: L-Shaped Schottky Barrier MOSFET for High Performance Analog and RF Applications. https://app.cochat.ai/papers/10.1007/s12633-022-02006-w
- The paper
- Rashid, S., Bashir, F., Khanday, F. A., & Beigh, M. R. (2023). L-Shaped Schottky Barrier MOSFET for High Performance Analog and RF Applications. Silicon. https://doi.org/10.1007/s12633-022-02006-w
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
