The intrinsic thermal conductivity of AIN
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Each is checked against this paper’s own text: does it say what the citing paper says it does?
The bulk thermal conductivity of AlN at T = 300 K is 285 W/mK.
“The bulk thermal conductivities of GaAs, GaN, AlN, and SiC (4H and 6H) at T = 300 K are 501213, 2301415, 28516, and 490 Wm−1K−11718, respectively.”
From Universal phonon mean free path spectra in crystalline semiconductors at high temperature (2013) · cites this paper as [16]
In-plane and cross-plane thermal conductivities of AlN varied by less than 5% at room temperature and above.
“Slack et al.16 reason that in-plane and cross-plane thermal conductivities of AlN varied by less than 5% at room temperature and above.”
From Universal phonon mean free path spectra in crystalline semiconductors at high temperature (2013) · cites this paper as [16]
Cited by
Sorted by citations
Zheng, Q., Li, C., Rai, A., Leach, J. H., Broido, D. A., & Cahill, D. G. (2019) · Physical Review Materials · doi:10.1103/physrevmaterials.3.014601 · Cited by 177 · see citing works
Universal phonon mean free path spectra in crystalline semiconductors at high temperature
Freedman, J. P., Leach, J. H., Preble, E. A., Sitar, Z., Davis, R. F., & Malen, J. A. (2013) · Scientific Reports · doi:10.1038/srep02963 · Cited by 171 · see citing works
Temperature Dependent Thermal Resistances at GaN-Substrate Interfaces in GaN Composite Substrates
Cho, J., Li, Y., Altman, D. H., Hoke, W. E., Asheghi, M., & Goodson, K. E. (2012) · 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) · doi:10.1109/csics.2012.6340094 · Cited by 22 · see citing works
Mitterhuber, L., Kosednar-Legenstein, B., Vohra, A., Borga, M., Posthuma, N., & Kraker, E. (2024) · Journal of Applied Physics · doi:10.1063/5.0207513 · Cited by 11 · see citing works
- Authors
- Slack, G. A., Tanzilli, R. A., Pohl, R. O., & Vandersande, J. W.
- Affiliations
- General Electric (United States) (US)
- Cornell University (US)
- Venue
- Journal of Physics and Chemistry of Solids
- Publisher
- Elsevier BV
- Published
- 1987-01
- Volume
- 48
- Issue
- 7
- Pages
- 641-647
- ISSN
- 0022-3697 (ISSN-L)
- OpenAlex
- W2062970180
- Cited by
- 1,009
- References
- 0
- Citations by year
- 2026: 48 · 2025: 51 · 2024: 32 · 2023: 46 · 2022: 51 · 2021: 36 · 2020: 52 · 2019: 42 · 2018: 37 · 2017: 29 · 2016: 38 · 2015: 31 · 2014: 32 · 2013: 26 · 2012: 34
- FWCI
- 12.60
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Physics and Chemistry of Solids (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Materials Science › Materials Chemistry › Thermal Expansion and Ionic Conductivity
- Keywords
- aluminum nitride, thermal conductivity, phonon heat conduction, phonon mean free path, boundary scattering, phonon-phonon scattering, temperature dependence, single crystals, high purity
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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