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Cited by 177Thermal properties of materialsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Thermal conductivity of GaN, GaN71 , and SiC from 150 K to 850 K

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Zheng, Qiye, Li, Chunhua, Rai, Akash, Leach, Jacob H., Broido, David A., Cahill, David G.·2019·Physical Review Materials
DOI 10.1103/physrevmaterials.3.014601
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Abstract

The thermal conductivity (\ensuremath{\Lambda}) of wide-band-gap semiconductors GaN and SiC is critical for their application in power devices and optoelectronics. Here, we report time-domain thermoreflectance measurements of \ensuremath{\Lambda} in GaN, $^{71}\mathrm{GaN}$, and SiC between 150 and 850 K. The samples include bulk $c$- and $m$-plane wurtzite GaN grown by hydride vapor phase epitaxy (HVPE) and ammonothermal methods; homoepitaxial natural isotope abundant GaN and isotopically enriched $^{71}\mathrm{GaN}$ layers with thickness of 6--12 \ensuremath{\mu}m grown on $c$-, $m$-, and $a$-plane GaN substrates grown by HVPE; and bulk crystals of 4H and 6H SiC. In low dislocation density ($<{10}^{7}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}2}$) bulk and homoepitaxial GaN, \ensuremath{\Lambda} is insensitive to crystal orientation and doping concentration (for doping $<{10}^{19}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}3}$); $\mathrm{\ensuremath{\Lambda}}\ensuremath{\approx}200\phantom{\rule{0.16em}{0ex}}\mathrm{W}\phantom{\rule{0.16em}{0ex}}{\mathrm{m}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{K}}^{\ensuremath{-}1}$ at 300 K and $\ensuremath{\approx}50\phantom{\rule{0.16em}{0ex}}\mathrm{W}\phantom{\rule{0.16em}{0ex}}{\mathrm{m}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{K}}^{\ensuremath{-}1}$ at 850 K. In $^{71}\mathrm{GaN}$ epilayers at 300 K, \ensuremath{\Lambda} is $\ensuremath{\approx}15%$ higher than in GaN with natural isotope abundance. The measured temperature dependence of \ensuremath{\Lambda} in GaN is stronger than predicted by first-principles based solutions of the Boltzmann transport equation that include anharmonicity up to third order. This discrepancy between theory and experiment suggests possible significant contributions to the thermal resistivity from higher-order phonon scattering that involve interactions between more than three phonons. The measured \ensuremath{\Lambda} of 4H and 6H SiC is anisotropic, in good agreement with first-principles calculations, and larger than GaN by a factor of $\ensuremath{\approx}1.5$ in the temperature range $300<T<850\phantom{\rule{0.16em}{0ex}}\mathrm{K}$. This paper provides benchmark knowledge about the thermal conductivity in wide-band-gap semiconductors of GaN, $^{71}\mathrm{GaN}$, and SiC over a wide temperature range for their applications in power electronics and optoelectronics.

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  • SiC exhibits high thermal conductivity (3.3-4.9 W cm-1 K-1; approximately 330-490 W m-1 K-1), enabling superior heat removal.

    “SiC exhibits high thermal conductivity (3.3-4.9 W cm -1 K -1 ; approximately 330-490 W m -1 K -1 ), enabling superior heat removal.”

    From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [6]

    The Conclusion (page unavailable) says SiC's higher thermal conductivity makes it advantageous for thermal management of high-power devices. The reported 300 K measurements for 4H and 6H SiC are 320–415 W m−1 K−1, depending on direction, rather than the claimed 330–490 W m−1 K−1; the copy does not substantiate 490 W m−1 K−1 as the upper end of that range. (LLM, conf=0.86)

    Experimental — accuracy not yet measured

  • GaN's thermal conductivity decreases with temperature.

    “GaN's thermal conductivity decreases with temperature [2,6].”

    From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [6]

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Authors
Zheng, Q., Li, C., Rai, A., Leach, J. H., Broido, D. A., & Cahill, D. G.
Affiliations
  • University of Illinois Urbana-Champaign (US)
  • Boston College (US)
  • Kyma Technologies (United States) (US)
ORCID
Venue
Physical Review Materials
Publisher
American Physical Society (APS)
Published
2019-01-03
Volume
3
Issue
1
ISSN
2475-9953 (ISSN-L)
DOI
10.1103/physrevmaterials.3.014601
OpenAlex
W2908147948
Cited by
177
References
124
Citations by year
2026: 27 · 2025: 38 · 2024: 26 · 2023: 19 · 2022: 14 · 2021: 20 · 2020: 23 · 2019: 10
FWCI
6.05
Type
journal article
Language
en
Update notices
correction (2019-07-22)
Open access
Licence
Locations
  • Physical Review Materials (publishedVersion)
  • OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
  • Rare & Special e-Zone (The Hong Kong University of Science and Technology) (submittedVersion)
Funders
  • U.S. Department of Energy (DE-AR0000876)
  • Office of Naval Research (N00014-16-1-2436)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Keywords
thermal conductivity, GaN, SiC, wide bandgap semiconductors, time-domain thermoreflectance, dislocation density, crystal orientation, doping concentration, temperature dependence, 4H-SiC, 6H-SiC, wurtzite GaN, homoepitaxial layers

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

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