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The DOI matches its Crossref record, with a small difference in title or year; 30 of the 30 references it cites were found in a registry or an index.

Design of ITO/SiO2/TiO2 distributed Bragg reflectors as a p-type electrode in GaN-based flip-chip light emitting diodes

Abstract

Abstract Two different SiO2/TiO2 distributed Bragg reflectors (DBR) with ITO ohmic contacts were investigated as p-type reflective electrodes in InGaN/GaN flip-chip light-emitting diodes (FC-LEDs). The DBR structures were designed to have reflectance over 95% at wavelengths of 400–520 nm (DBR 1) and 400–720 nm (DBR 2). These ranges are wider than those of the electroluminescence spectrum of blue FC-LEDs. The FC-LEDs with DBR 1 showed an output power of 114 mW at 200 mA, while those with DBR 2 presented higher output power of 135 mW. A ray tracing simulation showed that the anomalously low output power of the FC-LEDs with DBR 1 can be attributed to the low incidence angle to the DBR due to the diffraction of the light at the patterned sapphire substrate. A finite-difference time-domain simulation and angle-dependent reflectance measurement of the DBRs were also carried out. The results showed that DBR 2 yielded high reflectance even at low incidence angles, while DBR 1 presented low reflectance at incidence angles lower than 30°, followed by a reduction of the output power.

Overview

Integrity signals

Registry

Crossref · 10.1016/j.apsusc.2017.10.144

Cites

30 of 30 references verified0 citation errors · 0 not checkable

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Citations

Cites

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Cited by

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Metadata

Authors
Lee, G. J., Hong, I. Y., Kim, T. K., Park, H. J., Oh, S. K., Cha, Y.-J., Park, M. J., Choi, K. J., & Kwak, J. S.
Affiliations
  • Sunchon National University (KR)
  • Ulsan National Institute of Science and Technology (KR)
Corresponding author
Kwak, Joon Seop
Venue
Applied Surface Science
Publisher
Elsevier BV
Published
2019-05
Volume
477
Pages
220-225
ISSN
0169-4332 (ISSN-L)
OpenAlex
W2766005908
Cited by
19
References
30
Citations by year
2025: 1 · 2024: 1 · 2023: 3 · 2022: 2 · 2021: 4 · 2020: 3 · 2019: 2
FWCI
1.31
Type
journal article
Language
en
Open access
closed
Licence
  • www.elsevier.com/tdm/userlicense/1.0/ (tdm)
  • www.elsevier.com/legal/tdmrep-license (tdm)
Locations
  • Applied Surface Science (publishedVersion)
  • Scholarworks@UNIST (Ulsan National Institute of Science and Technology) (submittedVersion)
Funders
  • Ministry of Education (NRF-2014R1A6A1030419)
  • Ministry of Trade, Industry and Energy (10070201)
  • Korea Evaluation Institute of Industrial Technology
Topics
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
  • Physical Sciences › Materials Science › Surfaces, Coatings and Films › Optical Coatings and Gratings
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
Keywords
distributed Bragg reflector, TiO2/SiO2 multilayers, InGaN/GaN LEDs, blue LEDs, output power, incident angle dependence, patterned sapphire substrate, light diffraction, reflectivity

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This page
CoChat. (2026). Citation check: Design of ITO/SiO2/TiO2 distributed Bragg reflectors as a p-type electrode in GaN-based flip-chip light emitting diodes. https://app.cochat.ai/papers/10.1016/j.apsusc.2017.10.144
The paper
Lee, G. J., Hong, I. Y., Kim, T. K., Park, H. J., Oh, S. K., Cha, Y.-J., Park, M. J., Choi, K. J., & Kwak, J. S. (2019). Design of ITO/SiO2/TiO2 distributed Bragg reflectors as a p-type electrode in GaN-based flip-chip light emitting diodes. Applied Surface Science. https://doi.org/10.1016/j.apsusc.2017.10.144

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.