The DOI matches its Crossref record, with a small difference in title or year; 30 of the 30 references it cites were found in a registry or an index.
Design of ITO/SiO2/TiO2 distributed Bragg reflectors as a p-type electrode in GaN-based flip-chip light emitting diodes
Abstract
Abstract Two different SiO2/TiO2 distributed Bragg reflectors (DBR) with ITO ohmic contacts were investigated as p-type reflective electrodes in InGaN/GaN flip-chip light-emitting diodes (FC-LEDs). The DBR structures were designed to have reflectance over 95% at wavelengths of 400–520 nm (DBR 1) and 400–720 nm (DBR 2). These ranges are wider than those of the electroluminescence spectrum of blue FC-LEDs. The FC-LEDs with DBR 1 showed an output power of 114 mW at 200 mA, while those with DBR 2 presented higher output power of 135 mW. A ray tracing simulation showed that the anomalously low output power of the FC-LEDs with DBR 1 can be attributed to the low incidence angle to the DBR due to the diffraction of the light at the patterned sapphire substrate. A finite-difference time-domain simulation and angle-dependent reflectance measurement of the DBRs were also carried out. The results showed that DBR 2 yielded high reflectance even at low incidence angles, while DBR 1 presented low reflectance at incidence angles lower than 30°, followed by a reduction of the output power.
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In the citing paper
“By varying the number of pairs, they prepared Bragg structures with an over 95% reflectance at a normal incidence angle in the ranges of 400-530 nm (using 12 sequential pairs) and 385-720 nm (using 20 sequential pairs).”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [239]
In the citing paper
“The same material pair was used to obtain DBRs in InGaN/GaN flip-chip lightemitting diodes (FC-LEDs) through radio frequency magnetron reactive sputtering [239].”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [239]
Citations
Cites
Schubert, E. F., Gessmann, T., & Kim, J. K. (2005) · Kirk-Othmer Encyclopedia of Chemical Technology · doi:10.1002/0471238961.1209070811091908.a01.pub2 · Cited by 1,244
High-power AlGaInN flip-chip light-emitting diodes
Wierer, J. J., Steigerwald, D. A., Krames, M. R., O'Shea, J., Ludowise, M. J., Christenson, G. L., Shen, Y., Lowery, C., Martin, P. S., Subramanya, S. G., et al. (2001) · Applied Physics Letters · doi:10.1063/1.1374499 · Cited by 416
Guo, X., & Schubert, E. F. (2001) · Applied Physics Letters · doi:10.1063/1.1372359 · Cited by 222
Rate equation analysis of efficiency droop in InGaN light-emitting diodes
Ryu, H., Kim, H., & Shim, J. (2009) · Applied Physics Letters · doi:10.1063/1.3216578 · Cited by 219
Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates
Wuu, D., Wang, W. K., Shih, W.-C., et al. (2005) · IEEE Photonics Technology Letters · doi:10.1109/lpt.2004.839012 · Cited by 174
Ohmic and degradation mechanisms of Ag contacts on p-type GaN
Song, J.-O., Kwak, J. S., Park, Y., et al. (2005) · Applied Physics Letters · doi:10.1063/1.1863441 · Cited by 123
Self-citationMalyutenko, V. K., Bolgov, S. S., & Podoltsev, O. D. (2010) · Applied Physics Letters · doi:10.1063/1.3529470 · Cited by 122
Lee, J., Lee, D.-Y., Oh, B., et al. (2009) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2009.2034495 · Cited by 100
Modeling of a GaN-based light-emitting diode for uniform current spreading
Kim, H., Lee, J., Huh, C., et al. (2000) · Applied Physics Letters · doi:10.1063/1.1311819 · Cited by 96
GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector
Kim, J. K., Gessmann, T., Luo, H., et al. (2004) · Applied Physics Letters · doi:10.1063/1.1757634 · Cited by 93
Cited by
Metal Oxide Thin Films for Advanced Photonic Applications
Stîngescu, M.-L., Șopronyi, M.-A., Antohe, Ș., & Scărișoreanu, N.-D. (2026) · Crystals · doi:10.3390/cryst16030164 · Cited by 2
Metadata
- Authors
- Lee, G. J., Hong, I. Y., Kim, T. K., Park, H. J., Oh, S. K., Cha, Y.-J., Park, M. J., Choi, K. J., & Kwak, J. S.
- Affiliations
- Sunchon National University (KR)
- Ulsan National Institute of Science and Technology (KR)
- Corresponding author
- Kwak, Joon Seop
- Venue
- Applied Surface Science
- Publisher
- Elsevier BV
- Published
- 2019-05
- Volume
- 477
- Pages
- 220-225
- ISSN
- 0169-4332 (ISSN-L)
- OpenAlex
- W2766005908
- Cited by
- 19
- References
- 30
- Citations by year
- 2025: 1 · 2024: 1 · 2023: 3 · 2022: 2 · 2021: 4 · 2020: 3 · 2019: 2
- FWCI
- 1.31
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.elsevier.com/tdm/userlicense/1.0/ (tdm)
- www.elsevier.com/legal/tdmrep-license (tdm)
- Locations
- Applied Surface Science (publishedVersion)
- Scholarworks@UNIST (Ulsan National Institute of Science and Technology) (submittedVersion)
- Funders
- Ministry of Education (NRF-2014R1A6A1030419)
- Ministry of Trade, Industry and Energy (10070201)
- Korea Evaluation Institute of Industrial Technology
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Materials Science › Surfaces, Coatings and Films › Optical Coatings and Gratings
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
- Keywords
- distributed Bragg reflector, TiO2/SiO2 multilayers, InGaN/GaN LEDs, blue LEDs, output power, incident angle dependence, patterned sapphire substrate, light diffraction, reflectivity
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- Lee, G. J., Hong, I. Y., Kim, T. K., Park, H. J., Oh, S. K., Cha, Y.-J., Park, M. J., Choi, K. J., & Kwak, J. S. (2019). Design of ITO/SiO2/TiO2 distributed Bragg reflectors as a p-type electrode in GaN-based flip-chip light emitting diodes. Applied Surface Science. https://doi.org/10.1016/j.apsusc.2017.10.144
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.