Cited by 31Advancements in Semiconductor Devices and Circuit DesignGaN-based semiconductor devices and materialsAnalytical Chemistry and Sensors

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Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered- Schottky nano-wire fet(GaN-GME-DE-SNW-fet) based label-free biosensor

Sharma, Swati, Nath, Vandana, Deswal, S.S., Gupta, R.S.·2022·Microelectronics Journal

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Research works printed but not linked: 34

  1. Fritz, 2000, Translating biomolecular recognition into nanomechanics, Science, 288, 316, 10.1126/science.288.5464.316 · DOI
  2. Vaddiraju, 2010, Emerging synergy between nanotechnology 513 and implantable biosensors: a review, Biosens. Bioelectron., 25, 1553, 10.1016/j.bios.2009.12.001 · DOI
  3. Cui, 2001, Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species, science, 293, 1289, 10.1126/science.1062711 · DOI
  4. Bergveld, 1986, The development and application of FET-based biosensors, Biosensors, 2, 15, 10.1016/0265-928X(86)85010-6 · DOI
  5. Wenga, 2013, Step-gate polysilicon nanowires field effect transistor compatible with CMOS technology for label-free DNA biosensor, Biosens. Bioelectron., 40, 141, 10.1016/j.bios.2012.07.001 · DOI
  6. Guan, 2014, Highly specific and sensitive non-enzymatic determination of uric acid in serum and urine by extended gate field effect transistor sensors, Biosens. Bioelectron., 51, 225, 10.1016/j.bios.2013.07.061 · DOI
  7. Curreli, 2008, Real-time, label-free detection of biological entities using nanowire-based FETs, IEEE Trans. Nanotechnol., 7, 651, 10.1109/TNANO.2008.2006165 · DOI
  8. Latha, 2020, Dielectric modulated Schottky barrier TFET for the application as label-free biosensor, Silicon, 12, 2673, 10.1007/s12633-019-00363-7 · DOI
  9. Singh, 2021, Dielectric engineered Schottky barrier MOSFET for biosensor applications: proposal and investigation, Silicon, 1
  10. Kumari, 2021, Work function optimization for enhancement of sensitivity of dual-material (DM), double-gate (DG), junctionless MOSFET-based biosensor, Appl. Phys. A, 127, 1, 10.1007/s00339-020-04256-0 · DOI
  11. Das, 2021, Recent Technological Advancement in Surrounding Gate MOSFET for Biosensing Applications-A Synoptic Study, Silicon, 1
  12. Sugiura, 2010, Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator, Solid State Electron., 54, 79, 10.1016/j.sse.2009.10.007 · DOI
  13. Bhat, 2021, A dielectrically modulated GaN/AlN/alGaN MOSHEMT with a nanogap embedded cavity for biosensing applications, IETE J. Res., 1
  14. Pal, 2018, Modeling and simulation of AlGaN/GaN MOS-HEMT for biosensor applications, IEEE Sensor. J., 19, 587, 10.1109/JSEN.2018.2878243 · DOI
  15. Kumar, 2016, Physics based analytical model for surface potential and subthreshold current of cylindrical Schottky Barrier gate all around MOSFET with high-k gate stack, Superlattice. Microst., 90, 215, 10.1016/j.spmi.2015.12.029 · DOI
  16. Zhu, 2009, A compact model for undoped silicon- nanowire MOSFETs with Schottky-barrier source/drain, IEEE Trans. Electron. Dev., 56, 1100, 10.1109/TED.2009.2015161 · DOI
  17. Zhang, 2010, Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET, Solid State Electron., 54, 806, 10.1016/j.sse.2010.03.020 · DOI
  18. Kumar, 2017, Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach, J. Semiconduct., 38, 10.1088/1674-4926/38/12/124002 · DOI
  19. Hafiz, 2019, Dielectrically modulated source-engineered charge-plasma-based Schottky-FET as a label-free biosensor, IEEE Trans. Electron. Dev., 66, 1905, 10.1109/TED.2019.2896695 · DOI
  20. Anusuya, 2022, Recent study on Schottky tunnel field effect transistor for biosensing applications, Silicon, 1
  21. Saha, 2019, Two-dimensional potential and threshold voltage modeling of work function engineered double gate high-k gate stack Schottky barrier MOSFET, J. Electron. Mater., 48, 3823, 10.1007/s11664-019-07133-6 · DOI
  22. Sharma, 2022, Enhanced analog performance and high-frequency applications of dielectric engineered high-K Schottky nanowire FET, Silicon, 1
  23. Kumar, 2014, Impact of gate material engineering (GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation, Microelectron. J., 45, 1508, 10.1016/j.mejo.2014.07.010 · DOI
  24. Sehgal, 2021, Performance analysis and optimization of under-gate dielectric modulated Junctionless FinFET biosensor, IEEE Sensor. J., 21, 18897, 10.1109/JSEN.2021.3090263 · DOI
  25. Wenga, 2013, Step-gate polysilicon nanowires field effect transistor compatible with CMOS technology for label-free DNA biosensor, Biosens. Bioelectron., 40, 141, 10.1016/j.bios.2012.07.001 · DOI
  26. Kim, 2008, Novel dielectric modulated field-effect transistor for label-free DNA detection, Biochip J, 2, 127
  27. Kumar, 2016, Analytical model of threshold voltage degradation due to localized charges in gate material engineered Schottky barrier cylindrical GAA MOSFETs, Semicond. Sci. Technol., 31, 10.1088/0268-1242/31/10/105013 · DOI
  28. 2015, 3D device simulator, SILVACO International
  29. Sharma, 2016, Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET, Solid State Electron., 123, 26, 10.1016/j.sse.2016.05.016 · DOI
  30. Chang, 2008, CMOS ion sensitive field effect transistors for highly sensitive detection of DNA hybridisation, IEEE Sensor. J., 20, 8930, 10.1109/JSEN.2020.2986461 · DOI
  31. Gonçalves, 2008, Detection of DNA and proteins using amorphous silicon ion-sensitive thin-film field effect transistors, Biosens. Bioelectron., 24, 545, 10.1016/j.bios.2008.05.006 · DOI
  32. Kim, 2008, Novel dielectric modulated field-effect transistor for label-free DNA detection, Biochip J, 2, 127
  33. Balmert, 2015, Positive charge of "sticky" peptides and proteins impedes release from negatively charged PLGA matrices, J. Mater. Chem. B, 3, 4723, 10.1039/C5TB00515A · DOI
  34. Hvasanov, 2011, Induced polymersome formation from a diblock PS-b-PAA polymer via encapsulation of positively charged proteins and peptides, Chem. Commun., 47, 6314, 10.1039/c1cc11662b · DOI

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Metadata

Authors
Sharma, S., Nath, V., Deswal, S. S., & Gupta, R. S.
Affiliations
Guru Gobind Singh Indraprastha University (IN)
Corresponding author
Sharma, Swati
Venue
Microelectronics Journal
Publisher
Elsevier BV
Published
2022-11
Volume
129
Pages
105599
ISSN
1879-2391 (ISSN-L)
OpenAlex
W4301606140
Cited by
31
References
4
Citations by year
2026: 2 · 2025: 9 · 2024: 10 · 2023: 10
FWCI
1.99
Type
journal article
Language
en
Open access
closed
Locations
Microelectronics Journal (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
  • Physical Sciences › Chemistry › Analytical Chemistry › Analytical Chemistry and Sensors
Keywords
label-free biosensor, dielectric engineering, high-k dielectrics, hafnium oxide, threshold voltage, surface potential, sensitivity analysis, nanogap cavity, superposition method

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CoChat. (2026). Citation check: Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered- Schottky nano-wire fet(GaN-GME-DE-SNW-fet) based label-free biosensor. https://app.cochat.ai/papers/10.1016/j.mejo.2022.105599
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Sharma, S., Nath, V., Deswal, S. S., & Gupta, R. S. (2022). Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered- Schottky nano-wire fet(GaN-GME-DE-SNW-fet) based label-free biosensor. Microelectronics Journal. https://doi.org/10.1016/j.mejo.2022.105599