The DOI matches its Crossref record; 36 of the 36 references it cites were found in a registry or an index.
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
Open accessOverview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Introduction to Solid State Physics
Kittel, C., & Fan, H. Y. (1957) · American Journal of Physics · doi:10.1119/1.1934457 · Cited by 22,240
Introduction to solid state physics
(1956) · Journal of the Franklin Institute · doi:10.1016/0016-0032(56)90703-7 · Cited by 7,151
Statistics of the Recombinations of Holes and Electrons
Shockley, W., & Read, W. T. (1952) · Physical Review · doi:10.1103/physrev.87.835 · Cited by 6,589
Gillespie, D. T. (1976) · Journal of Computational Physics · doi:10.1016/0021-9991(76)90041-3 · Cited by 6,029
Non-adiabatic crossing of energy levels
Zener, C. (1932) · Proceedings of the Royal Society of London Series A Containing Papers of a Mathematical and Physical Character · doi:10.1098/rspa.1932.0165 · Cited by 4,572 · cited 1×
“[97].”
MOS /metal oxide semiconductor/ physics and technology
Nicollian, E. H., & Brews, J. R. (1982) · CERN Document Server (European Organization for Nuclear Research) · Cited by 2,098
MOS (Metal Oxide Semiconductor) Physics and Technology
Cave, K. J. S. (1983) · IEE Proceedings I Solid State and Electron Devices · doi:10.1049/ip-i-1.1983.0010 · Cited by 1,750
Theory of light absorption and non-radiative transitions in F -centres
Huang, K., & Rhys, A. (1950) · Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences · doi:10.1098/rspa.1950.0184 · Cited by 1,662
1fnoise and other slow, nonexponential kinetics in condensed matter
Weissman, M. B. (1988) · Reviews of Modern Physics · doi:10.1103/revmodphys.60.537 · Cited by 1,370
A reliable approach to charge-pumping measurements in MOS transistors
Groeseneken, G., Maes, H. E., Beltran, N., & De Keersmaecker, R. F. (1984) · IEEE Transactions on Electron Devices · doi:10.1109/t-ed.1984.21472 · Cited by 1,355
Metadata
- Authors
- Grasser, T.
- Venue
- Microelectronics Reliability
- Publisher
- Elsevier BV
- Published
- 2012-01
- Volume
- 52
- Issue
- 1
- Pages
- 39-70
- ISSN
- 0026-2714 (ISSN-L)
- OpenAlex
- W2157180100
- Cited by
- 554
- References
- 36
- FWCI
- 19.39
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities. https://app.cochat.ai/papers/10.1016/j.microrel.2011.09.002
- The paper
- Grasser, T. (2012). Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities. Microelectronics Reliability. https://doi.org/10.1016/j.microrel.2011.09.002
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
