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A reliable approach to charge-pumping measurements in MOS transistors
Abstract
A new and accurate approach to charge-pumping measurements for the determination of the Si-SiO2interface state density directly on MOS transistors is presented. By a careful analysis of the different processes of emission of electrons towards the conduction band and of holes towards the valence band, depending on the charge state of the interface, all the previously ill-understood phenomena can be explained and the deviations from the simple charge-pumping theory can be accounted for. The presence of a geometric component in some transistor configurations is illustrated and the influence of trapping time constants is discussed. Furthermore, based on this insight, a new technique is developed for the determination of the energy distribution of interface states in small-area transistors, without requiring the knowledge of the surface potential dependence on gate voltage.
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Citations
Cited by
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Review on high-k dielectrics reliability issues
Ribes, G., Mitard, J., Denais, M., Bruyere, S., Monsieur, F., Parthasarathy, C., Vincent, E., & Ghibaudo, G. (2005) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2005.845236 · Cited by 533
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
Kerber, A., Cartier, E., Pantisano, L., Degraeve, R., Kauerauf, T., Kim, Y., Hou, A., Groeseneken, G., Maes, H. E., & Schwalke, U. (2003) · IEEE Electron Device Letters · doi:10.1109/led.2003.808844 · Cited by 362
Self-citationThreshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs
Aichinger, T., Rescher, G., & Pobegen, G. (2018) · Microelectronics Reliability · doi:10.1016/j.microrel.2017.11.020 · Cited by 278
Metadata
- Authors
- Groeseneken, G., Maes, H. E., Beltran, N., & De Keersmaecker, R. F.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1984-01
- Volume
- 31
- Issue
- 1
- Pages
- 42-53
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2078482863
- Cited by
- 1,355
- References
- 0
- FWCI
- 11.33
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: A reliable approach to charge-pumping measurements in MOS transistors. https://app.cochat.ai/papers/10.1109/t-ed.1984.21472
- The paper
- Groeseneken, G., Maes, H. E., Beltran, N., & De Keersmaecker, R. F. (1984). A reliable approach to charge-pumping measurements in MOS transistors. IEEE Transactions on Electron Devices. https://doi.org/10.1109/t-ed.1984.21472
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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