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Anion-controlled passivation effect of the atomic layer deposited ZnO films by F substitution to O-related defects on the electronic band structure for transparent contact layer of solar cell applications
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A maximum shift of 0.2 eV in the valence band spectra of SnO2 due to F-doping indicates that the optical band gap shift was caused by a Fermi energy shift between pristine and F-SnO2 by band filling of the conduction band.
“Figure S10 shows a maximum shift of 0.2 eV in the valence band spectra of SnO2 due to F-doping, which indicates that the optical band gap shift was caused by a Fermi energy shift between pristine and F-SnO2 by band filling of the conduction band.”
From Highly Dispersed Pt Clusters on F-Doped Tin(IV) Oxide Aerogel Matrix: An Ultra-Robust Hybrid Catalyst for Enhanced Hydrogen Evolution (2022) · cites this paper as [41]
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Smith, R. B., Conti, C. R., Bennett, S. D., Altenhof, A. R., Strouse, G. F., & Schurko, R. W. (2025) · Chemistry of Materials · doi:10.1021/acs.chemmater.5c00496
Deepak, M. S., & Ben, B. S. (2025) · SSRN Electronic Journal · doi:10.2139/ssrn.5580227
In Situ Fluorine Doping of FZO Films by Atomic Layer Deposition
Tunckanat, M., & Imer, B. (2026) · ACS Omega · doi:10.1021/acsomega.5c10192
Metadata
- Authors
- Choi, Y.-J., Kang, K.-M., & Park, H.-H.
- Affiliations
- Yonsei University (KR)
- Corresponding author
- Park, Hyung-Ho
- Venue
- Solar Energy Materials and Solar Cells
- Publisher
- Elsevier BV
- Published
- 2015-01
- Volume
- 132
- Pages
- 403-409
- ISSN
- 0927-0248 (ISSN-L)
- OpenAlex
- W2000062098
- Cited by
- 65
- References
- 43
- Citations by year
- 2026: 4 · 2025: 7 · 2024: 8 · 2023: 7 · 2022: 8 · 2021: 3 · 2020: 6 · 2019: 7 · 2018: 4 · 2017: 5 · 2016: 4 · 2015: 2
- FWCI
- 1.57
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Solar Energy Materials and Solar Cells (publishedVersion)
- Funders
- Pohang University of Science and Technology
- Ministry of Education, Science and Technology (2012R1A2A2A01011014)
- National Research Foundation of Korea
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › ZnO doping and properties
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Thin-Film Transistor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Chalcogenide Semiconductor Thin Films
- Keywords
- ZnO thin films, fluorine doping, anion doping, defect passivation, solar cells, electronic band structure, optical band gap narrowing, photoluminescence, atomic layer deposition
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