Cited by 65ZnO doping and propertiesThin-Film Transistor TechnologiesChalcogenide Semiconductor Thin Films

The DOI matches its Crossref record; 43 of the 43 references it cites were found in a registry or an index.

Anion-controlled passivation effect of the atomic layer deposited ZnO films by F substitution to O-related defects on the electronic band structure for transparent contact layer of solar cell applications

Choi, Yong-June, Kang, Kyung-Mun, Park, Hyung-Ho·2015·Solar Energy Materials and Solar Cells

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Crossref · 10.1016/j.solmat.2014.09.029

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43 of 43 references verified0 citation errors · 0 not checkable

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  • A maximum shift of 0.2 eV in the valence band spectra of SnO2 due to F-doping indicates that the optical band gap shift was caused by a Fermi energy shift between pristine and F-SnO2 by band filling of the conduction band.

    “Figure S10 shows a maximum shift of 0.2 eV in the valence band spectra of SnO2 due to F-doping, which indicates that the optical band gap shift was caused by a Fermi energy shift between pristine and F-SnO2 by band filling of the conduction band.”

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Metadata

Authors
Choi, Y.-J., Kang, K.-M., & Park, H.-H.
Affiliations
Yonsei University (KR)
Corresponding author
Park, Hyung-Ho
Venue
Solar Energy Materials and Solar Cells
Publisher
Elsevier BV
Published
2015-01
Volume
132
Pages
403-409
ISSN
0927-0248 (ISSN-L)
OpenAlex
W2000062098
Cited by
65
References
43
Citations by year
2026: 4 · 2025: 7 · 2024: 8 · 2023: 7 · 2022: 8 · 2021: 3 · 2020: 6 · 2019: 7 · 2018: 4 · 2017: 5 · 2016: 4 · 2015: 2
FWCI
1.57
Type
journal article
Language
en
Open access
closed
Locations
Solar Energy Materials and Solar Cells (publishedVersion)
Funders
  • Pohang University of Science and Technology
  • Ministry of Education, Science and Technology (2012R1A2A2A01011014)
  • National Research Foundation of Korea
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › ZnO doping and properties
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Thin-Film Transistor Technologies
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Chalcogenide Semiconductor Thin Films
Keywords
ZnO thin films, fluorine doping, anion doping, defect passivation, solar cells, electronic band structure, optical band gap narrowing, photoluminescence, atomic layer deposition

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