Degradation characteristics of electron and proton irradiated InGaAsP/InGaAs dual junction solar cell
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
MJ GaInP/GaAs/Ge solar panels are widely used in space applications and have efficiencies of around 30%.
“MJ GaInP/GaAs/Ge solar panels are widely used in space applications and have efficiencies of around 30% [32].”
From Optimal Sizing and Siting of PV and Battery Based Space Microgrids Near the Moon’s Shackleton Crater (2023) · cites this paper as [32]
Multi-junction PV cells based on III-V semiconductors are the most widely used due to high efficiency, relatively cheap and mature manufacturing processes, and radiation hardness.
“Nowadays, the multi-junction (MJ) PV cells based on III-V semiconductors are the most widely used due to the high efficiency, relatively cheap and mature manufacturing processes, and radiation hardness [31].”
From Space Microgrids for Future Manned Lunar Bases: A Review (2021) · cites this paper as [31]
UMM PV cells have reached efficiencies around 40%.
“Recently, UMM PV cells have reached efficiencies around 40%.”
From Space Microgrids for Future Manned Lunar Bases: A Review (2021) · cites this paper as [31]
The triple-junction GaInP/GaAs/Ge architecture is widely used for space applications with efficiencies around 30%.
“Particularly, the triple-junction (TJ) GaInP/GaAs/Ge architecture is widely used for space applications with efficiencies around 30% [31].”
From Space Microgrids for Future Manned Lunar Bases: A Review (2021) · cites this paper as [31]
Cites
Drouin, D., Couture, A. R., Joly, D., Tastet, X., Aimez, V., & Gauvin, R. (2007) · Scanning · doi:10.1002/sca.20000 · Cited by 1,561 · see citing works
40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
King, R. R., Law, D. C., Edmondson, K. M., Fetzer, C. M., Kinsey, G. S., Yoon, H., Sherif, R. A., & Karam, N. H. (2007) · Applied Physics Letters · doi:10.1063/1.2734507 · Cited by 1,238 · see citing works
Guter, W., Schöne, J., Philipps, S. P., et al. (2009) · Applied Physics Letters · doi:10.1063/1.3148341 · Cited by 697 · see citing works
Solar cell efficiency tables (version 49)
Green, M. A., Emery, K. A., Hishikawa, Y., et al. (2016) · Progress in Photovoltaics Research and Applications · doi:10.1002/pip.2855 · Cited by 648 · see citing works
Multi-junction III–V solar cells: current status and future potential
Yamaguchi, M., Takamoto, T., Araki, K., et al. (2004) · Solar Energy · doi:10.1016/j.solener.2004.09.018 · Cited by 410 · see citing works
Displacement Damage Effects in Irradiated Semiconductor Devices
Srour, J. R., & Palko, J. W. (2013) · IEEE Transactions on Nuclear Science · doi:10.1109/tns.2013.2261316 · Cited by 350 · see citing works
Tada, H. Y., & Carter, J. R. (1989) · NASA STI Repository (National Aeronautics and Space Administration) · Cited by 310 · see citing works
Messenger, S. R., Summers, G. P., Burke, E. A., et al. (2001) · Progress in Photovoltaics Research and Applications · doi:10.1002/pip.357 · Cited by 299 · see citing works
06/01819 Multi-junction III–V solar cells: current status and future potential
(2006) · Fuel and Energy Abstracts · doi:10.1016/s0140-6701(06)81825-4 · Cited by 281 · see citing works
III-V compound SC for optoelectronic devices
Mokkapati, S., & Jagadish, C. (2009) · Materials Today · doi:10.1016/s1369-7021(09)70110-5 · Cited by 269 · see citing works
Nonionizing energy loss (NIEL) for heavy ions
Messenger, S. R., Burke, E. A., Summers, G. P., et al. (1999) · IEEE Transactions on Nuclear Science · doi:10.1109/23.819126 · Cited by 234 · see citing works
GaAs Solar Cell Radiation Handbook
Anspaugh, B. E. (2014) · NASA Technical Reports Server (NASA) · Cited by 203 · see citing works
Development of InGaP/GaAs/InGaAs inverted triple junction concentrator solar cells
SASAKI, K., Agui, T., Nakaido, K., et al. (2013) · AIP conference proceedings · doi:10.1063/1.4822190 · Cited by 184 · see citing works
MULASSIS: a Geant4-based multilayered shielding simulation tool
Lei, F., Truscott, R. R., Dyer, C. S., et al. (2002) · IEEE Transactions on Nuclear Science · doi:10.1109/tns.2002.805351 · Cited by 168 · see citing works
35.8% space and 38.8% terrestrial 5J direct bonded cells
Chiu, P. T., Law, D. C., Woo, R. L., et al. (2014) · Conference record of the IEEE Photovoltaic Specialists Conference · doi:10.1109/pvsc.2014.6924957 · Cited by 150 · see citing works
Dimroth, F., Roesener, T., Essig, S., Weuffen, C., Wekkeli, A., Oliva, E., Siefer, G., Volz, K., Hannappel, T., Haussler, D., et al. (2014) · IEEE Journal of Photovoltaics · doi:10.1109/jphotov.2014.2299406 · Cited by 107 · see citing works
Design Flexibility of Ultrahigh Efficiency Four-Junction Inverted Metamorphic Solar Cells
France, R. M., Geisz, J. F., García, I., et al. (2015) · IEEE Journal of Photovoltaics · doi:10.1109/jphotov.2015.2505182 · Cited by 101 · see citing works
High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells
Dharmarasu, N., Yamaguchi, M., Khan, A., et al. (2001) · Applied Physics Letters · doi:10.1063/1.1409270 · Cited by 88 · see citing works
Imaizumi, M., Nakamura, T., Takamoto, T., et al. (2016) · Progress in Photovoltaics Research and Applications · doi:10.1002/pip.2840 · Cited by 80 · see citing works
Patel, P., Aiken, D. J., Boca, A., et al. (2012) · IEEE Journal of Photovoltaics · doi:10.1109/jphotov.2012.2198048 · Cited by 71 · see citing works
High-energy proton irradiation effects in GaAs devices
Warner, J. H., Walters, R. J., Messenger, S. R., et al. (2004) · IEEE Transactions on Nuclear Science · doi:10.1109/tns.2004.835071 · Cited by 68 · see citing works
High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
Lu, S., Ji, L., He, W., Dai, P., Yang, H., Arimochi, M., Yoshida, H., Uchida, S., & Ikeda, M. (2011) · Nanoscale Research Letters · doi:10.1186/1556-276x-6-576 · Cited by 43 · see citing works
Self-citationOchoa, M., Yaccuzzi, E., Espinet‐González, P., et al. (2016) · Solar Energy Materials and Solar Cells · doi:10.1016/j.solmat.2016.09.042 · Cited by 41 · see citing works
Cornfeld, A. B., Aiken, D. J., Cho, B., et al. (2010) · Conference record of the IEEE Photovoltaic Specialists Conference · doi:10.1109/pvsc.2010.5614498 · Cited by 39 · see citing works
Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells
Aierken, A., Fang, L., Heini, M., Zhang, Q. M., Li, Z. H., Zhao, X., Sailai, M., Liu, H. T., Guo, Q., Gao, W., et al. (2018) · Solar Energy Materials and Solar Cells · doi:10.1016/j.solmat.2018.04.035 · Cited by 32 · see citing works
Self-citationJi, L., Lu, S., Wu, Y., et al. (2014) · Solar Energy Materials and Solar Cells · doi:10.1016/j.solmat.2014.03.051 · Cited by 28 · see citing works
Self-citationRecent results for concentrator photovoltaics in Japan
Yamaguchi, M., Takamoto, T., Araki, K., et al. (2016) · Japanese Journal of Applied Physics · doi:10.7567/jjap.55.04ea05 · Cited by 28 · see citing works
Dai, P., Lu, S., Uchida, S., et al. (2015) · Applied Physics Express · doi:10.7567/apex.9.016501 · Cited by 24 · see citing works
Self-citationMetamorphic GaInP-GaInAs Layers for Photovoltaic Applications
Bett, A. W., Baur, C., Dimroth, F., et al. (2004) · MRS Proceedings · doi:10.1557/proc-836-l6.4 · Cited by 23 · see citing works
Electron irradiation study of room-temperature wafer-bonded four-junction solar cell grown by MBE
Dai, P., Ji, L., Tan, M., et al. (2017) · Solar Energy Materials and Solar Cells · doi:10.1016/j.solmat.2017.06.046 · Cited by 20 · see citing works
Self-citationDegradation analysis of 1 MeV electron and 3 MeV proton irradiated InGaAs single junction solar cell
Shen, X. B., Aierken, A., Heini, M., et al. (2019) · AIP Advances · doi:10.1063/1.5094472 · Cited by 13 · see citing works
Self-citationNEMO : a code to compute NIEL of Protons, neutrons, electrons and heavy ions
Inguimbert, C., & Gigante, R. (2005) · ESA SP · doi:10.1109/radecs.2005.4365611 · Cited by 11 · see citing works
Superior radiation and dislocation tolerance of IMM space solar cells
Mehrotra, A., & Freundlich, A. (2012) · Conference record of the IEEE Photovoltaic Specialists Conference · doi:10.1109/pvsc.2012.6318247 · Cited by 10 · see citing works
Xu, Y., Heini, M., Shen, X., et al. (2019) · Japanese Journal of Applied Physics · doi:10.7567/1347-4065/aafd19 · Cited by 7 · see citing works
Self-citationIrradiation Effects in Space Solar Cells Made of Multiple Absorbers
Romero, M. J., Walters, R. J., Al-Jassim, M. M., et al. (2001) · MRS Proceedings · doi:10.1557/proc-692-h10.5.1 · Cited by 5 · see citing works
Recent progress of High-Efficiency III-V multijunction Solar Cells
Sun, L., Zhang, M., Fang, X., et al. (2013) · Conference record of the IEEE Photovoltaic Specialists Conference · doi:10.1109/pvsc.2013.6745061 · Cited by 3 · see citing works
Zhao, X., Heini, M., Sailai, M., et al. (2017) · Science China Information Sciences · doi:10.1007/s11432-017-9248-2 · Cited by 3 · see citing works
Self-citation
Flagged first, then by citations
Cited by
Sorted by citations
Space Microgrids for Future Manned Lunar Bases: A Review
Saha, D., Bazmohammadi, N., Raya-Armenta, J. M., Bintoudi, A. D., Lashab, A., Vasquez, J. C., & Guerrero, J. M. (2021) · IEEE Open Access Journal of Power and Energy · doi:10.1109/oajpe.2021.3116674 · Cited by 64 · see citing works
Optimal Sizing and Siting of PV and Battery Based Space Microgrids Near the Moon’s Shackleton Crater
Saha, D., Bazmohammadi, N., Raya-Armenta, J. M., Bintoudi, A. D., Lashab, A., Vasquez, J. C., & Guerrero, J. M. (2023) · IEEE Access · doi:10.1109/access.2023.3239303 · Cited by 32 · see citing works
“space applications and have efficiencies of around 30% [32].”
Background
- Authors
- Zhao, X. F., Aierken, A., Heini, M., Tan, M., Wu, Y. Y., Lu, S. L., Hao, R. T., Mo, J. H., Zhuang, Y., Shen, X. B., Xu, Y., Lei, Q. Q., & Guo, Q.
- Affiliations
- Chinese Academy of Sciences (CN)
- Yunnan Normal University (CN)
- Corresponding author
- Aierken, A.
- Venue
- Solar Energy Materials and Solar Cells
- Publisher
- Elsevier BV
- Published
- 2020-03
- Volume
- 206
- Pages
- 110339
- ISSN
- 0927-0248 (ISSN-L)
- OpenAlex
- W2995433357
- Cited by
- 33
- References
- 37
- Citations by year
- 2026: 4 · 2025: 6 · 2024: 2 · 2023: 8 · 2022: 6 · 2021: 6 · 2020: 1
- FWCI
- 1.17
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Solar Energy Materials and Solar Cells (publishedVersion)
- Funders
- Natural Science Foundation of China (61534008)
- Director Foundation of Xinjiang Technical Institute of Phys. & Chem. CAS (Y52H121101)
- National Natural Science Foundation of China (61774130, 11474248)
- Ph.D. Programs Foundation of Ministry of Education of China (20105303120002)
- West Light Foundation of The Chinese Academy of Sciences (2017-XBQNXZ-B-004)
- Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (ZHD201705)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › solar cell performance optimization
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon and Solar Cell Technologies
- Physical Sciences › Energy › Nuclear Energy and Engineering › Advanced Energy Technologies and Civil Engineering Innovations
- Keywords
- radiation-induced degradation, electron irradiation, proton irradiation, radiation-induced defects, nonradiative recombination centers, displacement damage dose, short-circuit current density
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review