Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

Abstract

Abstract Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such fundamental properties as exciton binding energies and band gaps. We report here an experimental determination of exciton excited states and binding energies for monolayer WS 2 and WSe 2 . We observe peaks in the optical reflectivity/absorption spectra corresponding to the ground- and excited-state excitons (1 s and 2 s states). From these features, we determine lower bounds free of any model assumptions for the exciton binding energies as E 2s A − E 1s A of 0.83 eV and 0.79 eV for WS 2 and WSe 2 , respectively, and for the corresponding band gaps E g ≥ E 2s A of 2.90 and 2.53 eV at 4 K. Because the binding energies are large, the true band gap is substantially higher than the dominant spectral feature commonly observed with photoluminescence. This information is critical for emerging applications, and provides new insight into these novel monolayer semiconductors.