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Cited by 33Ferroelectric and Negative Capacitance DevicesFerroelectric and Piezoelectric MaterialsMultiferroics and related materials

Effects of Electrodes on the Properties of Sol–Gel PZT Based Capacitors in FeRAM

Zhang, Ming-Ming, Jia, Ze, Ren, Tian-Ling·2009·Solid-State Electronics
DOI 10.1016/j.sse.2009.03.005
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Crossref · 10.1016/j.sse.2009.03.005

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Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

  • Defect chemistry is most responsible for electrical properties of PZT films, including leakage currents, fatigue, retention, imprint.

    “Defect chemistry is most responsible for the electrical properties of PZT films, including leakage currents, fatigue, retention, imprint, etc. [61].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [61]

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Authors
Zhang, M.-M., Jia, Z., & Ren, T.-L.
Affiliations
Tsinghua University (CN)
Corresponding author
Jia, Ze
ORCID
Ren, Tian-Ling
Venue
Solid-State Electronics
Publisher
Elsevier BV
Published
2009-05
Volume
53
Issue
5
Pages
473-477
ISSN
0038-1101 (ISSN-L)
DOI
10.1016/j.sse.2009.03.005
OpenAlex
W2084085904
Cited by
33
References
0
Citations by year
2023: 2 · 2022: 2 · 2020: 1 · 2019: 1 · 2018: 1 · 2017: 1 · 2016: 1 · 2015: 9 · 2014: 2 · 2013: 5 · 2012: 3
FWCI
2.11
Type
journal article
Language
en
Open access
closed
Licence
www.elsevier.com/tdm/userlicense/1.0/ (tdm)
Locations
Solid-State Electronics (publishedVersion)
Funders
National Natural Science Foundation of China
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
Keywords
ferroelectric random access memory, ferroelectric capacitors, electrode materials, platinum electrode, iridium electrodes, remnant polarization, Schottky barrier, leakage current, fatigue (material), imprint, lattice mismatch, film orientation

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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

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