The DOI matches its Crossref record; 46 of the 46 references it cites were found in a registry or an index.
Substrates for gallium nitride epitaxy
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Citations
Cites
Strite, S., & Morkoç, H. (1992) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.585897 · Cited by 2,883
Nonmetallic crystals with high thermal conductivity
Slack, G. A. (1973) · Journal of Physics and Chemistry of Solids · doi:10.1016/0022-3697(73)90092-9 · Cited by 2,151
Growth and applications of Group III-nitrides
Ambacher, O. (1998) · Journal of Physics D: Applied Physics · doi:10.1088/0022-3727/31/20/001 · Cited by 1,474
Casady, J. B., & Johnson, R. W. (1996) · Solid-State Electronics · doi:10.1016/0038-1101(96)00045-7 · Cited by 1,445
THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
Maruska, H. P., & Tietjen, J. J. (1969) · Applied Physics Letters · doi:10.1063/1.1652845 · Cited by 1,350
CRC Materials Science and Engineering Handbook
Shackelford, J. F., Han, Y.-H., Kim, S., & Kwon, S.-H. (2016) · CRC Press eBooks · doi:10.1201/b18971 · Cited by 1,274
Okada, Y., & Tokumaru, Y. (1984) · Journal of Applied Physics · doi:10.1063/1.333965 · Cited by 1,215
High dislocation densities in high efficiency GaN-based light-emitting diodes
Lester, S. D., Ponce, F. A., Craford, M. G., & Steigerwald, D. A. (1995) · Applied Physics Letters · doi:10.1063/1.113252 · Cited by 966
CRC Materials Science and Engineering Handbook
(2000) · CRC Press eBooks · doi:10.1201/9781420038408 · Cited by 616
Investigation of growth processes of ingots of silicon carbide single crystals
Tairov, Y. M., & Tsvetkov, V. F. (1978) · Journal of Crystal Growth · doi:10.1016/0022-0248(78)90169-0 · Cited by 594
Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Metadata
- Authors
- Liu, L., & Edgar, J. H.
- Venue
- Materials Science and Engineering: R: Reports
- Publisher
- Elsevier BV
- Published
- 2002-04
- Volume
- 37
- Issue
- 3
- Pages
- 61-127
- ISSN
- 0927-796X (ISSN-L)
- OpenAlex
- W1974072513
- Cited by
- 833
- References
- 46
- FWCI
- 19.10
- Type
- journal article
- Language
- en
- Open access
- closed
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- Liu, L., & Edgar, J. H. (2002). Substrates for gallium nitride epitaxy. Materials Science and Engineering: R: Reports. https://doi.org/10.1016/s0927-796x(02)00008-6
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
