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THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
Abstract
Single-crystalline, colorless, GaN has been prepared by a vapor-phase growth technique previously used to prepare GaAs, GaP, and GaSb. These crystals are the first reported speciments of GaN suitable for good electrical and optical evaluation of this compound. It has been determined that GaN has a direct energy bandgap of 3.39 eV, and that undoped crystals prepared by this method have a very high inherent electron concentration, typically above 1019/cm3, which is probably related to a high density of nitrogen vacancies. Conducting p-type specimens have been prepared using Ge as the dopant; but this result has been difficult to reproduce, and the samples have been electrically inhomogeneous.
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Citations
Cited by
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Van de Walle, C. G., & Neugebauer, J. (2004) · Journal of Applied Physics · doi:10.1063/1.1682673 · Cited by 3,257
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Substrates for gallium nitride epitaxy
Liu, L., & Edgar, J. H. (2002) · Materials Science and Engineering: R: Reports · doi:10.1016/s0927-796x(02)00008-6 · Cited by 833
Fabrication and performance of GaN electronic devices
Pearton, S. J., Ren, F., Zhang, A. P., & Lee, K. P. (2000) · Materials Science and Engineering: R: Reports · doi:10.1016/s0927-796x(00)00028-0 · Cited by 507
Native defects in gallium nitride
Bogusl/awski, P., Briggs, E. L., & Bernholc, J. (1995) · Physical Review B · doi:10.1103/physrevb.51.17255 · Cited by 469
Metadata
- Authors
- Maruska, H. P., & Tietjen, J. J.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1969-11-15
- Volume
- 15
- Issue
- 10
- Pages
- 327-329
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2119392370
- Cited by
- 1,350
- References
- 0
- FWCI
- 9.17
- Type
- journal article
- Language
- en
- Open access
- closed
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- Maruska, H. P., & Tietjen, J. J. (1969). THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN. Applied Physics Letters. https://doi.org/10.1063/1.1652845
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