The DOI matches its Crossref record; 9 of the 9 references it cites were found in a registry or an index.
GaN for space application: almost ready for flight
Abstract
On the last years, gallium nitride (GaN) technology has made a remarked breakthrough in the world of microwave electronics. Power transistors are now available. How this GaN technology would impact space-borne units is now a priority concern. Although the power capability of GaN technology is the first obvious profit, GaN could also be used for other applications like low noise amplifiers, mixers, and probably more. The high sustainable temperature of GaN transistors is most striking advantage for in-flight use. This is connected to packaging design which is also experiencing a lot of activities and quick progresses. Of course, space application is dependent upon the full demonstration of reliability and this constitutes another field of investigation. Finally, after 8 years of GaN studies, experimental results are presented: they open wide the road a revolution inside space-borne electronics: the rise of GaN.
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“This problem has been solved by wrapping each cell in a thin copper layer and soldering the copper substrate to the battery cells with the power conditioning board [134].”
From A Comprehensive Review on Small Satellite Microgrids (2022) · cites this paper as [134]
Citations
Cites
del Alamo, J. A., & Joh, J. (2009) · Microelectronics Reliability · doi:10.1016/j.microrel.2009.07.003 · Cited by 502
Universit` a degli Studi di Napoli
MARCO, A. D. (2007) · Cited by 165
Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications
Suijker, E. M., Rodenburg, M., Hoogland, J. A., van Heijningen, M., Seelmann‐Eggebert, M., Quay, R., Brückner, P., & van Vliet, F. E. (2009) · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · doi:10.1109/csics.2009.5315640 · Cited by 89
30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs
Inoue, T., Ando, Y., Miyamoto, H., Nakayama, T., Okamoto, Y., Hataya, K., & Kuzuhara, M. (2005) · IEEE Transactions on Microwave Theory and Techniques · doi:10.1109/tmtt.2004.839333 · Cited by 60
Phased-array and radar astounding breakthroughs - An update
Brookner, E. (2008) · Proceedings of the IEEE National Radar Conference · doi:10.1109/radar.2008.4720771 · Cited by 57
X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling
Janssen, J., van Heijningen, M., Provenzano, G., Visser, G. C., Morvan, E., & van Vliet, F. E. (2008) · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · doi:10.1109/csics.2008.23 · Cited by 52
High-power monolithic AlGaN/GaN HEMT switch for X-band applications
Ciccognani, W., Dominicis, M. D., Ferrari, M., Limiti, E., Peroni, M., & Romanini, P. (2008) · Electronics Letters · doi:10.1049/el:20081170 · Cited by 27
de Jaeger, J. C., Delage, S. L., Dambrine, G., Poisson, M. A., Hoel, V., Lépilliet, S., Grimbert, B., Morvan, E., Mancuso, Y., Gauthier, G., et al. (2005) · AMS Acta (University of Bologna) · doi:10.6092/unibo/amsacta/1343 · Cited by 25
Efficient AlGaN/GaN HEMT Power Amplifiers
Quay, R., van Raay, F., Kuhn, J., Kiefer, R., Waltereit, P., Zorcic, M., Musser, M., Bronner, W., Dammann, M., Seelmann-Eggebert, M., et al. (2008) · 2008 European Microwave Integrated Circuit Conference · doi:10.1109/emicc.2008.4772235 · Cited by 13
Research works printed but not linked: 3
- [16] Muraro J.L. : Safe operating area for new generation of space satellite SSPA based on wide band gap semiconductors, in European Space Agency, Workshop Wide Bandgap, Noordwijk 2–3 April 2007.
- [12] Mitani M. : 800 W AIGaN/GaN HEMT S-band transistor, in MANTECH Conf., 5114–17/07, Austin, TX.
- [5] Parikh P. : High linearity, robust, AlGaN-GaN HEMTs for LNA & receiver Ics, in IEEE Leaster Eastman Conf., Newark DE, 6–8 August 2002.
Cited by
A Comprehensive Review on Small Satellite Microgrids
Yaqoob, M., Lashab, A., Vasquez, J. C., Guerrero, J. M., Orchard, M. E., & Bintoudi, A. D. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3175093 · Cited by 93
Metadata
- Authors
- Muraro, J.-L., Nicolas, G., Nhut, D. M., Forestier, S., Rochette, S., Vendier, O., Langrez, D., Cazaux, J.-L., & Feudale, M.
- Affiliations
- Thales Alenia Space (France) (FR)
- Corresponding author
- Muraro, Jean-Luc
- Venue
- International Journal of Microwave and Wireless Technologies
- Publisher
- Cambridge University Press (CUP)
- Published
- 2010-02
- Volume
- 2
- Issue
- 1
- Pages
- 121-133
- ISSN
- 1759-0787 (ISSN-L)
- 1759-0795
- OpenAlex
- W2108779497
- Cited by
- 33
- References
- 9
- Citations by year
- 2024: 1 · 2023: 3 · 2022: 4 · 2021: 2 · 2020: 2 · 2019: 2 · 2018: 4 · 2017: 2 · 2016: 2 · 2015: 1 · 2014: 1 · 2013: 4 · 2012: 5
- FWCI
- 2.13
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- International Journal of Microwave and Wireless Technologies (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Power Amplifier Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Keywords
- gallium nitride, GaN power transistors, space electronics, low noise amplifier, mixer, high-temperature operation, packaging design, reliability, microwave electronics
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- CoChat. (2026). Citation check: GaN for space application: almost ready for flight. https://app.cochat.ai/papers/10.1017/s1759078710000206
- The paper
- Muraro, J.-L., Nicolas, G., Nhut, D. M., Forestier, S., Rochette, S., Vendier, O., Langrez, D., Cazaux, J.-L., & Feudale, M. (2010). GaN for space application: almost ready for flight. International Journal of Microwave and Wireless Technologies. https://doi.org/10.1017/s1759078710000206
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
