The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
GaN HEMT reliability
Overview
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Citations
Cites
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Meneghesso, G., Verzellesi, G., Danesin, F., Rampazzo, F., Zanon, F., Tazzoli, A., Meneghini, M., & Zanoni, E. (2008) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2008.923743 · Cited by 675
Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Stability, Reliability, and Robustness of GaN Power Devices: A Review
Kozak, J. P., Zhang, R., Porter, M., Song, Q., Liu, J., Wang, B., Wang, R., Saito, W., & Zhang, Y. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3266365 · Cited by 441
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Joh, J., & del Alamo, J. A. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2010.2087339 · Cited by 441
Self-citationHoo Teo, K., Zhang, Y., Chowdhury, N., Rakheja, S., Ma, R., Xie, Q., Yagyu, E., Yamanaka, K., Li, K., & Palacios, T. (2021) · Journal of Applied Physics · doi:10.1063/5.0061555 · Cited by 322
GaN for space application: almost ready for flight
Muraro, J.-L., Nicolas, G., Nhut, D. M., Forestier, S., Rochette, S., Vendier, O., Langrez, D., Cazaux, J.-L., & Feudale, M. (2010) · International Journal of Microwave and Wireless Technologies · doi:10.1017/s1759078710000206 · Cited by 33
Metadata
- Authors
- del Alamo, J. A., & Joh, J.
- Venue
- Microelectronics Reliability
- Publisher
- Elsevier BV
- Published
- 2009-09
- Volume
- 49
- Issue
- 9-11
- Pages
- 1200-1206
- ISSN
- 0026-2714 (ISSN-L)
- OpenAlex
- W2141966815
- Cited by
- 502
- References
- 1
- FWCI
- 23.01
- Type
- journal article
- Language
- en
- Open access
- closed
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: GaN HEMT reliability. https://app.cochat.ai/papers/10.1016/j.microrel.2009.07.003
- The paper
- del Alamo, J. A., & Joh, J. (2009). GaN HEMT reliability. Microelectronics Reliability. https://doi.org/10.1016/j.microrel.2009.07.003
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
