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Postsynthetic Surface Trap Removal of CsPbX3 (X = Cl, Br, or I) Quantum Dots via a ZnX2/Hexane Solution toward an Enhanced Luminescence Quantum Yield

Li, Fei, Liu, Ying, Wang, Hongliang, Zhan, Qian, Liu, Quanlin, Xia, Zhiguo·2018·Chemistry of Materials

Abstract

The control of surface properties of all inorganic cesium lead halide perovskite (CsPbX 3; X = Cl, Br, or I) quantum dots (QDs) is essential to achieve excellent stability and high photoluminescence quantum yields (PLQYs). Herein, a facile method was performed to simultaneously enhance the stability and PLQYs of CsPbX 3 QDs by a ZnX 2 /hexane solution post-treatment. We show that the halogen defect on the surface of CsPbX 3 QDs can be treated in a controlled way, whereby the “black dots” that adhered on the surface as observed by transmission electron microscopy have be completely removed, resulting in enhanced stability and photoluminescence. The PLQYs of CsPbCl 3, CsPbBr 3, and CsPbI 3 increased from 4, 58, and 63% to 86, 93, and 95%, respectively, and the origin of the “black dots” as well as their transformation mechanism has been demonstrated. As a result, the poly(dimethylsiloxane) composite films created by encapsulating stable and nearly defect-free green-emitting CsPbBr 3, the red-emitting K 2 SiF 6:Mn 4+ phosphor, and a blue emission GaN chip were prepared and used to fabricate a remote-type white light-emitting diode device, which exhibits a high luminescence efficiency (≤98 lm/W) and a wide color gamut (∼130% of the National Television Standard Committee standard), suggesting the potential for liquid crystal display backlight application.

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Metadata

Authors
Li, F., Liu, Y., Wang, H., Zhan, Q., Liu, Q., & Xia, Z.
Venue
Chemistry of Materials
Published
2018-11-07
Volume
30
Issue
23
Pages
8546-8554
ISSN
  • 0897-4756 (ISSN-L)
  • 1520-5002
OpenAlex
W2899588918
Cited by
339
References
44
FWCI
16.46
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Postsynthetic Surface Trap Removal of CsPbX3 (X = Cl, Br, or I) Quantum Dots via a ZnX2/Hexane Solution toward an Enhanced Luminescence Quantum Yield. https://app.cochat.ai/papers/10.1021/acs.chemmater.8b03442
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Li, F., Liu, Y., Wang, H., Zhan, Q., Liu, Q., & Xia, Z. (2018). Postsynthetic Surface Trap Removal of CsPbX3 (X = Cl, Br, or I) Quantum Dots via a ZnX2/Hexane Solution toward an Enhanced Luminescence Quantum Yield. Chemistry of Materials. https://doi.org/10.1021/acs.chemmater.8b03442

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