Cited by 4,229Quantum Dots Synthesis And PropertiesSemiconductor Quantum Structures and DevicesLuminescence Properties of Advanced Materials

(CdSe)ZnS Core−Shell Quantum Dots: Synthesis and Characterization of a Size Series of Highly Luminescent Nanocrystallites

Dabbousi, B. O., Rodriguez-Viejo, J., Mikulec, F. V., Heine, J. R., Mattoussi, H., Ober, R., Jensen, K. F., Bawendi, M. G.·1997·The Journal of Physical Chemistry B

Abstract

We report a synthesis of highly luminescent (CdSe)ZnS composite quantum dots with CdSe cores ranging in diameter from 23 to 55 Å. The narrow photoluminescence (fwhm ≤ 40 nm) from these composite dots spans most of the visible spectrum from blue through red with quantum yields of 30−50% at room temperature. We characterize these materials using a range of optical and structural techniques. Optical absorption and photoluminescence spectroscopies probe the effect of ZnS passivation on the electronic structure of the dots. We use a combination of wavelength dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, small and wide angle X-ray scattering, and transmission electron microscopy to analyze the composite dots and determine their chemical composition, average size, size distribution, shape, and internal structure. Using a simple effective mass theory, we model the energy shift for the first excited state for (CdSe)ZnS and (CdSe)CdS dots with varying shell thickness. Finally, we characterize the growth of ZnS on CdSe cores as locally epitaxial and determine how the structure of the ZnS shell influences the photoluminescence properties.

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Crossref · 10.1021/jp971091y

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35 of 35 references verified0 citation errors · 0 not checkable

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  • The role of the ZnS shell, or capping layer, is to protect the core exciton from surface defects and dangling bonds, which dramatically reduce the luminescence efficiency.

    “The role of the ZnS shell, or capping layer, is to protect the core exciton from surface defects and dangling bonds, which dramatically reduce the luminescence efficiency (Hines andGuyot-Sionnest 1996, Dabbousi et al 1997).”

    From Single-photon sources (2005) · cites this paper as Dabbousi et al 1997

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Authors
Dabbousi, B. O., Rodriguez-Viejo, J., Mikulec, F. V., Heine, J. R., Mattoussi, H., Ober, R., Jensen, K. F., & Bawendi, M. G.
Affiliations
  • Collège de France (FR)
  • Departments of Chemistry, Chemical Engineering, and Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139, and Laboratoire de Physique de la Matière Condensée, Collège de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France
Venue
The Journal of Physical Chemistry B
Published
1997-11-01
Volume
101
Issue
46
Pages
9463-9475
ISSN
  • 1520-5207 (ISSN-L)
  • 1520-6106
OpenAlex
W2044543075
Cited by
4,229
References
35
Citations by year
2026: 56 · 2025: 80 · 2024: 85 · 2023: 81 · 2022: 94 · 2021: 105 · 2020: 152 · 2019: 181 · 2018: 184 · 2017: 186 · 2016: 197 · 2015: 227 · 2014: 223 · 2013: 278 · 2012: 266
FWCI
22.83
Type
journal article
Language
en
Open access
closed
Locations
The Journal of Physical Chemistry B (publishedVersion)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Quantum Dots Synthesis And Properties
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor Quantum Structures and Devices
  • Physical Sciences › Materials Science › Materials Chemistry › Luminescence Properties of Advanced Materials
Keywords
CdSe/ZnS quantum dots, ZnS shell, photoluminescence, quantum yield, electronic structure, shell thickness, effective mass theory, epitaxial growth, size distribution, nanocrystal synthesis

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