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Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire
Abstract
The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P 6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c -oriented sapphire substrate, with the Ga 2 O 3 [10–10] direction being parallel to the Al 2 O 3 direction [11–20], yielding a lattice mismatch of about 4.1%.
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Crystal structure refinement with SHELXL
Sheldrick, G. M. (2015) · Acta Crystallographica Section C Structural Chemistry · doi:10.1107/s2053229614024218 · Cited by 43,982
Cited by
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Pearton, S. J., Ren, F., Tadjer, M., & Kim, J. (2018) · Journal of Applied Physics · doi:10.1063/1.5062841 · Cited by 659
The real structure of ε-Ga2O3 and its relation to κ-phase
Cora, I., Mezzadri, F., Boschi, F., Bosi, M., Čaplovičová, M., Calestani, G., Dódony, I., Pécz, B., & Fornari, R. (2017) · CrystEngComm · doi:10.1039/c7ce00123a · Cited by 389
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Metadata
- Authors
- Mezzadri, F., Calestani, G., Boschi, F., Delmonte, D., Bosi, M., & Fornari, R.
- Venue
- Inorganic Chemistry
- Publisher
- American Chemical Society (ACS)
- Published
- 2016-11-08
- Volume
- 55
- Issue
- 22
- Pages
- 12079-12084
- ISSN
- 0020-1669 (ISSN-L)
- 1520-510X
- OpenAlex
- W2554936423
- Cited by
- 268
- References
- 1
- FWCI
- 5.51
- Type
- journal article
- Language
- en
- Open access
- closed
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- Mezzadri, F., Calestani, G., Boschi, F., Delmonte, D., Bosi, M., & Fornari, R. (2016). Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire. Inorganic Chemistry. https://doi.org/10.1021/acs.inorgchem.6b02244
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