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Fundamental Efficiency Limit of Lead Iodide Perovskite Solar Cells
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Abstract Lead halide materials have seen a recent surge of interest from the photovoltaics community following the observation of surprisingly high photovoltaic performance, with optoelectronic properties similar to GaAs. This begs the question: What is the limit for the efficiency of these materials? It has been known that under 1-sun illumination the efficiency limit of crystalline silicon is ∼29%, despite the Shockley–Queisser (SQ) limit for its bandgap being ∼33%: the discrepancy is due to strong Auger recombination. In this article, we show that methyl ammonium lead iodide (MAPbI3) likewise has a larger than expected Auger coefficient. Auger nonradiative recombination decreases the theoretical external luminescence efficiency to ∼95% at open-circuit conditions. The Auger penalty is much reduced at the operating point where the carrier density is less, producing an oddly high fill factor of ∼90.4%. This compensates the Auger penalty and leads to a power conversion efficiency of 30.5%, close to ideal for the MAPbI3 bandgap.
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Metadata
- Authors
- Pazos-Outón, L. M., Xiao, T. P., & Yablonovitch, E.
- Venue
- The Journal of Physical Chemistry Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2018-03-14
- Volume
- 9
- Issue
- 7
- Pages
- 1703-1711
- ISSN
- 1948-7185 (ISSN-L)
- OpenAlex
- W2789283143
- Cited by
- 305
- References
- 26
- FWCI
- 12.80
- Type
- journal article
- Language
- en
- Open access
- hybrid
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