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Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition
Abstract
In this work, we have demonstrated the synthesis of high-quality monolayered α-In2Se3 using physical vapor deposition method under atmospheric pressure. The quality of the In2Se3 atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and atomic force microscope. The atomically resolved images have been obtained by the annular dark-field scanning transmission electron microscope. The field-effect transistors have been fabricated using the atomically layered In2Se3 and exhibit p-type semiconducting behaviors with the mobility up to 2.5 cm(2)/ Vs. The In2Se3 layers also show a good photoresponsivity of 340A/W, as well as 6 ms response time for the rise and 12 ms for the fall. These results make In2Se3 atomic layers a promising candidate for the optoelectronic and photosensitive device applications.
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Cited by
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Metadata
- Authors
- Zhou, J., Zeng, Q., Lv, D., Sun, L., Niu, L., Fu, W., Liu, F., Shen, Z., Jin, C., & Liu, Z.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-09-16
- Volume
- 15
- Issue
- 10
- Pages
- 6400-6405
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2413352534
- Cited by
- 308
- References
- 25
- FWCI
- 7.59
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhou, J., Zeng, Q., Lv, D., Sun, L., Niu, L., Fu, W., Liu, F., Shen, Z., Jin, C., & Liu, Z. (2015). Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition. Nano Letters. https://doi.org/10.1021/acs.nanolett.5b01590
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