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Cited by 308

The DOI matches its Crossref record; 25 of the 25 references it cites were found in a registry or an index.

Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition

Zhou, Jiadong, Zeng, Qingsheng, Lv, Danhui, Sun, Linfeng, Niu, Lin, Fu, Wei, Liu, Fucai, Shen, Zexiang, Jin, Chuanhong, Liu, Zheng·2015·Nano Letters

Abstract

In this work, we have demonstrated the synthesis of high-quality monolayered α-In2Se3 using physical vapor deposition method under atmospheric pressure. The quality of the In2Se3 atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and atomic force microscope. The atomically resolved images have been obtained by the annular dark-field scanning transmission electron microscope. The field-effect transistors have been fabricated using the atomically layered In2Se3 and exhibit p-type semiconducting behaviors with the mobility up to 2.5 cm(2)/ Vs. The In2Se3 layers also show a good photoresponsivity of 340A/W, as well as 6 ms response time for the rise and 12 ms for the fall. These results make In2Se3 atomic layers a promising candidate for the optoelectronic and photosensitive device applications.

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Metadata

Authors
Zhou, J., Zeng, Q., Lv, D., Sun, L., Niu, L., Fu, W., Liu, F., Shen, Z., Jin, C., & Liu, Z.
Venue
Nano Letters
Published
2015-09-16
Volume
15
Issue
10
Pages
6400-6405
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2413352534
Cited by
308
References
25
FWCI
7.59
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition. https://app.cochat.ai/papers/10.1021/acs.nanolett.5b01590
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Zhou, J., Zeng, Q., Lv, D., Sun, L., Niu, L., Fu, W., Liu, F., Shen, Z., Jin, C., & Liu, Z. (2015). Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition. Nano Letters. https://doi.org/10.1021/acs.nanolett.5b01590

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