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Cited by 426

The DOI matches its Crossref record; 45 of the 45 references it cites were found in a registry or an index.

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

Open access
Chuang, Hsun-Jen, Chamlagain, Bhim, Koehler, Michael, Perera, Meeghage Madusanka, Yan, Jiaqiang, Mandrus, David, Tománek, David, Zhou, Zhixian·2016·Nano Letters

Abstract

We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ∼0.3 kΩ μm, high on/off ratios up to >10(9), and high drive currents exceeding 320 μA μm(-1). These favorable characteristics are combined with a two-terminal field-effect hole mobility μFE ≈ 2 × 10(2) cm(2) V(-1) s(-1) at room temperature, which increases to >2 × 10(3) cm(2) V(-1) s(-1) at cryogenic temperatures. We observe a similar performance also in MoS2 and MoSe2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.

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Metadata

Authors
Chuang, H.-J., Chamlagain, B., Koehler, M., Perera, M. M., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z.
Venue
Nano Letters
Published
2016-02-10
Volume
16
Issue
3
Pages
1896-1902
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2258171898
Cited by
426
References
45
FWCI
21.97
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors. https://app.cochat.ai/papers/10.1021/acs.nanolett.5b05066
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Chuang, H.-J., Chamlagain, B., Koehler, M., Perera, M. M., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z. (2016). Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors. Nano Letters. https://doi.org/10.1021/acs.nanolett.5b05066

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