The DOI matches its Crossref record; 45 of the 45 references it cites were found in a registry or an index.
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
Open accessAbstract
We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ∼0.3 kΩ μm, high on/off ratios up to >10(9), and high drive currents exceeding 320 μA μm(-1). These favorable characteristics are combined with a two-terminal field-effect hole mobility μFE ≈ 2 × 10(2) cm(2) V(-1) s(-1) at room temperature, which increases to >2 × 10(3) cm(2) V(-1) s(-1) at cryogenic temperatures. We observe a similar performance also in MoS2 and MoSe2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Das, S., Chen, H.-Y., Penumatcha, A. V., & Appenzeller, J. (2013) · Nano Letters · doi:10.1021/nl303583v · Cited by 2,428
Atomically thin p–n junctions with van der Waals heterointerfaces
Lee, C.-H., Lee, G.-H., van der Zande, A. M., Chen, W., Li, Y., Han, M., Cui, X., Arefe, G., Nuckolls, C., Heinz, T. F., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.150 · Cited by 2,303
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Fang, H., Chuang, S., Chang, T. C., Takei, K., Takahashi, T., & Javey, A. (2012) · Nano Letters · doi:10.1021/nl301702r · Cited by 1,862
Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
Kappera, R., Voiry, D., Yalcin, S. E., Branch, B., Gupta, G., Mohite, A. D., & Chhowalla, M. (2014) · Nature Materials · doi:10.1038/nmat4080 · Cited by 1,847
Mobility engineering and a metal–insulator transition in monolayer MoS2
Radisavljevic, B., & Kis, A. (2013) · Nature Materials · doi:10.1038/nmat3687 · Cited by 1,817
Band offsets and heterostructures of two-dimensional semiconductors
Kang, J., Tongay, S., Zhou, J., Li, J., & Wu, J. (2013) · Applied Physics Letters · doi:10.1063/1.4774090 · Cited by 1,708
Optical generation of excitonic valley coherence in monolayer WSe2
Jones, A. M., Yu, H., Ghimire, N. J., Wu, S., Aivazian, G., Ross, J. S., Zhao, B., Yan, J., Mandrus, D. G., Xiao, D., et al. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.151 · Cited by 1,459
Self-citationTongay, S., Zhou, J., Ataca, C., Lo, K., Matthews, T. S., Li, J., Grossman, J. C., & Wu, J. (2012) · Nano Letters · doi:10.1021/nl302584w · Cited by 1,428
Cited by
Two-dimensional transistors beyond graphene and TMDCs
Liu, Y., Duan, X., Huang, Y., & Duan, X. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00318a · Cited by 474
Metadata
- Authors
- Chuang, H.-J., Chamlagain, B., Koehler, M., Perera, M. M., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2016-02-10
- Volume
- 16
- Issue
- 3
- Pages
- 1896-1902
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2258171898
- Cited by
- 426
- References
- 45
- FWCI
- 21.97
- Type
- journal article
- Language
- en
- Open access
- green
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- Chuang, H.-J., Chamlagain, B., Koehler, M., Perera, M. M., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z. (2016). Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors. Nano Letters. https://doi.org/10.1021/acs.nanolett.5b05066
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