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High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Open accessAbstract
We report high performance p-type field-effect transistors based on single layered (thickness, ∼0.7 nm) WSe(2) as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ∼250 cm(2)/(V s), perfect subthreshold swing of ∼60 mV/dec, and I(ON)/I(OFF) of >10(6) at room temperature. Special attention is given to lowering the contact resistance for hole injection by using high work function Pd contacts along with degenerate surface doping of the contacts by patterned NO(2) chemisorption on WSe(2). The results here present a promising material system and device architecture for p-type monolayer transistors with excellent characteristics.
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Cited by
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The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
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Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Synthesis of MoS 2 and MoSe 2 Films with Vertically Aligned Layers
Kong, D., Wang, H., Cha, J. J., Pasta, M., Koski, K. J., Yao, J., & Cui, Y. (2013) · Nano Letters · doi:10.1021/nl400258t · Cited by 2,250
Metadata
- Authors
- Fang, H., Chuang, S., Chang, T. C., Takei, K., Takahashi, T., & Javey, A.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-06-19
- Volume
- 12
- Issue
- 7
- Pages
- 3788-3792
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2073321070
- Cited by
- 1,862
- References
- 0
- FWCI
- 53.72
- Type
- journal article
- Language
- en
- Open access
- green
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- Fang, H., Chuang, S., Chang, T. C., Takei, K., Takahashi, T., & Javey, A. (2012). High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts. Nano Letters. https://doi.org/10.1021/nl301702r
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