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GeP3: A Small Indirect Band Gap 2D Crystal with High Carrier Mobility and Strong Interlayer Quantum Confinement
Open accessAbstract
We propose a two-dimensional crystal that possesses low indirect band gaps of 0.55 eV (monolayer) and 0.43 eV (bilayer) and high carrier mobilities similar to those of phosphorene, GeP 3 . GeP 3 has a stable three-dimensional layered bulk counterpart, which is metallic and known from experiment since 1970. GeP 3 monolayer has a calculated cleavage energy of 1.14 J m –2, which suggests exfoliation of bulk material as viable means for the preparation of mono- and few-layer materials. The material shows strong interlayer quantum confinement effects, resulting in a band gap reduction from mono- to bilayer, and then to a semiconductor–metal transition between bi- and triple layer. Under biaxial strain, the indirect band gap can be turned into a direct one. Pronounced light absorption in the spectral range from ∼600 to 1400 nm is predicted for monolayer and bilayer and promises applications in photovoltaics.
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Projector augmented-wave method
Blöchl, P. E. (1994) · Physical Review B · doi:10.1103/physrevb.50.17953 · Cited by 92,732
From ultrasoft pseudopotentials to the projector augmented-wave method
Kresse, G., & Joubert, D. (1999) · Physical Review B · doi:10.1103/physrevb.59.1758 · Cited by 85,307
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Solvent engineering for high-performance inorganic–organic hybrid perovskite solar cells
Jeon, N. J., Noh, J. H., Kim, Y. C., Yang, W. S., Ryu, S., & Seok, S. I. (2014) · Nature Materials · doi:10.1038/nmat4014 · Cited by 6,723
Cited by
van der Waals Metallic Transition Metal Dichalcogenides
Han, G. H., Duong, D. L., Keum, D. H., Yun, S. J., & Lee, Y. H. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00618 · Cited by 371
A Rigorous Method of Calculating Exfoliation Energies from First Principles
Jung, J. H., Park, C.-H., & Ihm, J. (2018) · Nano Letters · doi:10.1021/acs.nanolett.7b04201 · Cited by 361
Tunable Magnetism and Extraordinary Sunlight Absorbance in Indium Triphosphide Monolayer
Miao, N., Xu, B., Bristowe, N. C., Zhou, J., & Sun, Z. (2017) · Journal of the American Chemical Society · doi:10.1021/jacs.7b05133 · Cited by 320
2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy
Li, L., Wang, W., Gong, P., Zhu, X., Deng, B., Shi, X., Gao, G., Li, H., & Zhai, T. (2018) · Advanced Materials · doi:10.1002/adma.201706771 · Cited by 313
Metadata
- Authors
- Jing, Y., Ma, Y., Li, Y., & Heine, T.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2017-02-01
- Volume
- 17
- Issue
- 3
- Pages
- 1833-1838
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2566310817
- Cited by
- 410
- References
- 5
- FWCI
- 18.86
- Type
- journal article
- Language
- en
- Open access
- green
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- Jing, Y., Ma, Y., Li, Y., & Heine, T. (2017). GeP3: A Small Indirect Band Gap 2D Crystal with High Carrier Mobility and Strong Interlayer Quantum Confinement. Nano Letters. https://doi.org/10.1021/acs.nanolett.6b05143
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