The DOI matches its Crossref record; 60 of the 60 references it cites were found in a registry or an index.
Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator
Abstract
Highly stable antimonene, as the cousin of phosphorene from group-VA, has opened up exciting realms in the two-dimensional (2D) materials family. However, pristine antimonene is an indirect band gap semiconductor, which greatly restricts its applications for optoelectronics devices. Identifying suitable materials, both responsive to incident photons and efficient for carrier transfer, is urgently needed for ultrathin devices. Herein, by means of first-principles computations we found that it is rather feasible to realize a new class of 2D materials with a direct bandgap and high carrier mobility, namely antimonene oxides with different content of oxygen. Moreover, these tunable direct bandgaps cover a wide range from 0 to 2.28 eV, which are crucial for solar cell and photodetector applications. Especially, the antimonene oxide (18Sb–18O) is a 2D topological insulator with a sizable global bandgap of 177 meV, which has a nontrivial Z 2 topological invariant in the bulk and the topological states on the edge. Our findings not only introduce new vitality into 2D group-VA materials family and enrich available candidate materials in this field but also highlight the potential of these 2D semiconductors as appealing ultrathin materials for future flexible electronics and optoelectronics devices.
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Self-citationTopological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
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Cited by
Recent progress in 2D group-VA semiconductors: from theory to experiment
Zhang, S., Guo, S., Chen, Z., Wang, Y., Gao, H., Gómez-Herrero, J., Ares, P., Zamora, F., Zhu, Z., & Zeng, H. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00125h · Cited by 850
Self-citation2D V‐V Binary Materials: Status and Challenges
Guo, S., Zhang, Y., Ge, Y., Zhang, S., Zeng, H., & Zhang, H. (2019) · Advanced Materials · doi:10.1002/adma.201902352 · Cited by 363
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Metadata
- Authors
- Zhang, S., Zhou, W., Ma, Y., Ji, J., Cai, B., Yang, S. A., Zhu, Z., Chen, Z., & Zeng, H.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2017-05-03
- Volume
- 17
- Issue
- 6
- Pages
- 3434-3440
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2610217321
- Cited by
- 293
- References
- 60
- FWCI
- 21.68
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhang, S., Zhou, W., Ma, Y., Ji, J., Cai, B., Yang, S. A., Zhu, Z., Chen, Z., & Zeng, H. (2017). Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator. Nano Letters. https://doi.org/10.1021/acs.nanolett.7b00297
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