The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3
Abstract
Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered α-In 2 Se 3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In 2 Se 3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (∼1.3 eV) of ferroelectric In 2 Se 3, a prototypical nonvolatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.
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Generalized Gradient Approximation Made Simple
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3865 · Cited by 215,824
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
Wu, W., Wang, L., Li, Y., Zhang, F., Lin, L., Niu, S., Chenet, D., Zhang, X., Hao, Y., Heinz, T. F., et al. (2014) · Nature · doi:10.1038/nature13792 · Cited by 2,287
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Cited by
Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In2Se3
Xue, F., Zhang, J., Hu, W., Hsu, W.-T., Han, A., Leung, S.-F., Huang, J.-K., Wan, Y., Liu, S., Zhang, J., et al. (2018) · ACS Nano · doi:10.1021/acsnano.8b02152 · Cited by 319
Self-citationXue, F., He, X., Wang, Z., Retamal, J. R. D., Chai, Z., Jing, L., Zhang, C., Fang, H., Chai, Y., Jiang, T., et al. (2021) · Advanced Materials · doi:10.1002/adma.202008709 · Cited by 130
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Metadata
- Authors
- Cui, C., Hu, W.-J., Yan, X., Addiego, C., Gao, W., Wang, Y., Wang, Z., Li, L., Cheng, Y., Li, P., Zhang, X., Alshareef, H. N., Wu, T., Zhu, W., Pan, X., & Li, L.-J.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2018-02-05
- Volume
- 18
- Issue
- 2
- Pages
- 1253-1258
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2787765020
- Cited by
- 834
- References
- 3
- FWCI
- 22.14
- Type
- journal article
- Language
- en
- Open access
- closed
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- Cui, C., Hu, W.-J., Yan, X., Addiego, C., Gao, W., Wang, Y., Wang, Z., Li, L., Cheng, Y., Li, P., Zhang, X., Alshareef, H. N., Wu, T., Zhu, W., Pan, X., & Li, L.-J. (2018). Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3. Nano Letters. https://doi.org/10.1021/acs.nanolett.7b04852
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