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Cited by 586

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Oxygen Vacancy Generation and Stabilization in CeO2–x by Cu Introduction with Improved CO2 Photocatalytic Reduction Activity

Wang, Min, Shen, Meng, Jin, Xixiong, Tian, Jianjian, Li, Mengli, Zhou, Yajun, Zhang, Lingxia, Li, Yongsheng, Shi, Jianlin·2019·ACS Catalysis

Abstract

Introducing O vacancies into the lattice of a semiconductor photocatalyst can alter its intrinsic electronic properties and band gap, thus enhancing the visible light absorption, promoting the separation/transfer of photogenerated charge carriers, and resultantly elevating the photocatalytic activity of oxide semiconductors. Moreover, O vacancies can help adsorb and activate CO 2 on photocatalyst surfaces, which, however, are prone to being filled by O atoms during the photoreduction reaction. In this work, Cu was introduced to increase the O vacancy concentration in CeO 2– x and promote the photocatalytic activity of CeO 2– x . The sample Cu/CeO 2– x -0.1 showed the highest photocatalytic activity with a CO yield of 8.25 μmol g –1 under 5 h irradiation, which is ∼26 times that on CeO 2– x . According to the analysis of Raman and X-ray photoelectron spectroscopy (XPS) spectra, it has been evidenced that Cu introduction benefits the chemical stabilization of O vacancies in CeO 2– x during photocatalytic CO 2 reduction, which is responsible for the improved and sustained photocatalytic activity.

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Crossref · 10.1021/acscatal.8b03975

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Metadata

Authors
Wang, M., Shen, M., Jin, X., Tian, J., Li, M., Zhou, Y., Zhang, L., Li, Y., & Shi, J.
Venue
ACS Catalysis
Published
2019-04-12
Volume
9
Issue
5
Pages
4573-4581
ISSN
2155-5435 (ISSN-L)
OpenAlex
W2937295527
Cited by
586
References
1
FWCI
12.06
Type
journal article
Language
en
Open access
closed

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