The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Uncovering the Effects of Metal Contacts on Monolayer MoS2
Open accessAbstract
Abstract Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here, we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.2 eV) and monolayer MoS2 grown by chemical vapor deposition. We evaporate thin metal films onto MoS2 and study the interfaces by Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and electrical characterization. We uncover that (1) ultrathin oxidized Al dopes MoS2n-type (>2 × 1012 cm–2) without degrading its mobility, (2) Ag, Au, and Ni deposition causes varying levels of damage to MoS2 (e.g. broadening Raman E′ peak from <3 to >6 cm–1), and (3) Ti, Sc, and Y react with MoS2. Reactive metals must be avoided in contacts to monolayer MoS2, but control studies reveal the reaction is mostly limited to the top layer of multilayer films. Finally, we find that (4) thin metals do not significantly strain MoS2, as confirmed by X-ray diffraction. These are important findings for metal contacts to MoS2 and broadly applicable to many other 2D semiconductors.
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Citations
Cites
Defect Engineering in Single-Layer MoS 2 Using Heavy Ion Irradiation
He, Z., Zhao, R., Chen, X., Chen, H., Zhu, Y., Su, H., Huang, S., Xue, J., Dai, J., Cheng, S., et al. (2018) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.8b17145 · Cited by 213
Cited by
High Current Density in Monolayer MoS2 Doped by AlOx
McClellan, C. J., Yalon, E., Smithe, K. K. H., Suryavanshi, S. V., & Pop, E. (2021) · ACS Nano · doi:10.1021/acsnano.0c09078 · Cited by 267
Self-citationBai, X., Lv, H., Liu, Z., Chen, J., Wang, J., Sun, B., Zhang, Y., Wang, R., & Shi, K. (2021) · Journal of Hazardous Materials · doi:10.1016/j.jhazmat.2021.125830 · Cited by 213
Metadata
- Authors
- Schauble, K., Zakhidov, D., Yalon, E., Deshmukh, S., Grady, R. W., Cooley, K. A., McClellan, C. J., Vaziri, S., Passarello, D., Mohney, S. E., Toney, M. F., Sood, A. K., Salleo, A., & Pop, E.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2020-09-09
- Volume
- 14
- Issue
- 11
- Pages
- 14798-14808
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W3045880681
- Cited by
- 160
- References
- 1
- FWCI
- 7.83
- Type
- journal article
- Language
- en
- Open access
- green
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