The DOI matches its Crossref record; 53 of the 53 references it cites were found in a registry or an index.
High Current Density in Monolayer MoS2 Doped by AlOx
Open accessAbstract
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior. Here we show that low-temperature (<200 °C) substoichiometric AlO x provides a stable n -doping layer for monolayer MoS 2, compatible with circuit integration. This approach achieves carrier densities >2 × 10 13 cm –2, sheet resistance as low as ∼7 kΩ/□, and good contact resistance ∼480 Ω·μm in transistors from monolayer MoS 2 grown by chemical vapor deposition. We also reach record current density of nearly 700 μA/μm (>110 MA/cm 2 ) along this three-atom-thick semiconductor while preserving transistor on/off current ratio >10 6 . The maximum current is ultimately limited by self-heating (SH) and could exceed 1 mA/μm with better device heat sinking. With their 0.1 nA/μm off-current, such doped MoS 2 devices approach several low-power transistor metrics required by the international technology roadmap.
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Cites
Electronics based on two-dimensional materials
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Electrical contacts to two-dimensional semiconductors
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Device scaling limits of Si MOSFETs and their application dependencies
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Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
Baugher, B. W. H., Churchill, H. O. H., Yang, Y., & Jarillo-Herrero, P. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.25 · Cited by 1,523
Symmetry-dependent phonon renormalization in monolayer MoS2transistor
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Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
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Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
Ghatak, S., Pal, A. N., & Ghosh, A. (2011) · ACS Nano · doi:10.1021/nn202852j · Cited by 865
Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
Fang, H., Tosun, M., Seol, G., Chang, T. C., Takei, K., Guo, J., & Javey, A. (2013) · Nano Letters · doi:10.1021/nl400044m · Cited by 760
Chloride Molecular Doping Technique on 2D Materials: WS 2 and MoS 2
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Cited by
Wang, Y., Sarkar, S., Yan, H., & Chhowalla, M. (2024) · Nature Electronics · doi:10.1038/s41928-024-01210-3 · Cited by 183
Metadata
- Authors
- McClellan, C. J., Yalon, E., Smithe, K. K. H., Suryavanshi, S. V., & Pop, E.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2021-01-06
- Volume
- 15
- Issue
- 1
- Pages
- 1587-1596
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W3119675150
- Cited by
- 267
- References
- 53
- FWCI
- 11.79
- Type
- journal article
- Language
- en
- Open access
- green
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