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Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides
Abstract
2D semiconducting metal phosphorus trichalcogenides, particularly the bulk crystals of MPS3 (M = Fe, Mn, Ni, Cd and Zn) sulfides and MPSe3 (M = Fe and Mn) selenides, have been synthesized, crystallized and exfoliated into monolayers. The Raman spectra of monolayer FePS3 and 3-layer FePSe3 show the strong intralayer vibrations and structural stability of the atomically thin layers under ambient condition. The band gaps can be adjusted by element choices in the range of 1.3-3.5 eV. The wide-range band gaps suggest their optoelectronic applications in a broad wavelength range. The calculated cleavage energies of MPS3 are smaller than that of graphite. Therefore, the monolayers used for building of heterostructures by van der Waals stacking could be considered as the candidates for artificial 2D materials with unusual ferroelectric and magnetic properties.
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Cites
Projector augmented-wave method
Blöchl, P. E. (1994) · Physical Review B · doi:10.1103/physrevb.50.17953 · Cited by 92,732
From ultrasoft pseudopotentials to the projector augmented-wave method
Kresse, G., & Joubert, D. (1999) · Physical Review B · doi:10.1103/physrevb.59.1758 · Cited by 85,307
Cited by
Ising-Type Magnetic Ordering in Atomically Thin FePS3
Lee, J.-U., Lee, S., Ryoo, J. H., Kang, S., Kim, T. Y., Kim, P., Park, C.-H., Park, J.-G., & Cheong, H. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b03052 · Cited by 1,074
Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
Wang, Z., Gutiérrez‐Lezama, I., Ubrig, N., Kroner, M., Gibertini, M., Taniguchi, T., Watanabe, K., İmamoğlu, A., Giannini, E., & Morpurgo, A. F. (2018) · Archive ouverte UNIGE (University of Geneva) · doi:10.3929/ethz-b-000275019 · Cited by 578
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Probing and controlling magnetic states in 2D layered magnetic materials
Mak, K. F., Shan, J., & Ralph, D. C. (2019) · Nature Reviews Physics · doi:10.1038/s42254-019-0110-y · Cited by 549
Wide Band Gap Chalcogenide Semiconductors
Woods-Robinson, R., Han, Y., Zhang, H., Ablekim, T., Khan, I., Persson, K. A., & Zakutayev, A. (2020) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00600 · Cited by 513
Metadata
- Authors
- Du, K.-Z., Wang, X.-Z., Liu, Y., Hu, P., Utama, M. I. B., Gan, C. K., Xiong, Q., & Kloc, C.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-12-04
- Volume
- 10
- Issue
- 2
- Pages
- 1738-1743
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2174861091
- Cited by
- 569
- References
- 2
- FWCI
- 11.06
- Type
- journal article
- Language
- en
- Open access
- closed
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