The DOI matches its Crossref record; 45 of the 45 references it cites were found in a registry or an index.
Extremely Low Operating Current Resistive Memory Based on Exfoliated 2D Perovskite Single Crystals for Neuromorphic Computing
Abstract
Extremely low energy consumption neuromorphic computing is required to achieve massively parallel information processing on par with the human brain. To achieve this goal, resistive memories based on materials with ionic transport and extremely low operating current are required. Extremely low operating current allows for low power operation by minimizing the program, erase, and read currents. However, materials currently used in resistive memories, such as defective HfO x, AlO x, TaO x, etc., cannot suppress electronic transport ( i . e ., leakage current) while allowing good ionic transport. Here, we show that 2D Ruddlesden–Popper phase hybrid lead bromide perovskite single crystals are promising materials for low operating current nanodevice applications because of their mixed electronic and ionic transport and ease of fabrication. Ionic transport in the exfoliated 2D perovskite layer is evident via the migration of bromide ions. Filaments with a diameter of approximately 20 nm are visualized, and resistive memories with extremely low program current down to 10 pA are achieved, a value at least 1 order of magnitude lower than conventional materials. The ionic migration and diffusion as an artificial synapse is realized in the 2D layered perovskites at the pA level, which can enable extremely low energy neuromorphic computing.
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Cites
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Cited by
Two-dimensional materials for next-generation computing technologies
Liu, C., Chen, H., Wang, S., Liu, Q., Jiang, Y.-G., Zhang, D. W., Liu, M., & Zhou, P. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0724-3 · Cited by 1,045
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Low‐Dimensional Metal Halide Perovskite Photodetectors
Wang, H., Li, S., Liu, X., Shi, Z., Fang, X., & He, J. (2021) · Advanced Materials · doi:10.1002/adma.202003309 · Cited by 574
Wang, S., Chen, C., Yu, Z., He, Y., Chen, X., Wan, Q., Shi, Y., Zhang, D. W., Zhou, H., Wang, X., et al. (2019) · Advanced Materials · doi:10.1002/adma.201806227 · Cited by 489
Self-citationTwo-dimensional halide perovskite nanomaterials and heterostructures
Shi, E., Gao, Y., Finkenauer, B. P., Akriti, A., Coffey, A. H., & Dou, L. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00886d · Cited by 445
Metadata
- Authors
- Tian, H., Zhao, L., Wang, X., Yeh, Y.-W., Yao, N., Rand, B. P., & Ren, T.-L.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2017-12-11
- Volume
- 11
- Issue
- 12
- Pages
- 12247-12256
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2775001084
- Cited by
- 371
- References
- 45
- FWCI
- 15.10
- Type
- journal article
- Language
- en
- Open access
- closed
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- Tian, H., Zhao, L., Wang, X., Yeh, Y.-W., Yao, N., Rand, B. P., & Ren, T.-L. (2017). Extremely Low Operating Current Resistive Memory Based on Exfoliated 2D Perovskite Single Crystals for Neuromorphic Computing. ACS Nano. https://doi.org/10.1021/acsnano.7b05726
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