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Resistive switching in transition metal oxides

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Sawa, Akihito·2008·Materials Today
DOI 10.1016/s1369-7021(08)70119-6
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Abstract

Rapid advances in information technology rely on high-speed and large-capacity nonvolatile memories. A number of alternatives to contemporary Flash memory have been extensively studied to obtain a more powerful and functional nonvolatile memory. We review the current status of one of the alternatives, resistance random access memory (ReRAM), which uses a resistive switching phenomenon found in transition metal oxides. A ReRAM memory cell is a capacitor-like structure composed of insulating or semiconducting transition metal oxides that exhibits reversible resistive switching on applying voltage pulses. Recent advances in the understanding of the driving mechanism are described in light of experimental results involving memory cells composed of perovskite manganites and titanates.

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Metadata

Authors
Sawa, A.
Venue
Materials Today
Publisher
Elsevier BV
Published
2008-06
Volume
11
Issue
6
Pages
28-36
ISSN
1369-7021 (ISSN-L)
DOI
10.1016/s1369-7021(08)70119-6
OpenAlex
W2048936516
Cited by
2,948
References
4
FWCI
100.71
Type
journal article
Language
en
Open access
hybrid
Licence

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CoChat. (2026). Citation check: Resistive switching in transition metal oxides. https://app.cochat.ai/papers/10.1016/s1369-7021(08)70119-6
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Sawa, A. (2008). Resistive switching in transition metal oxides. Materials Today. https://doi.org/10.1016/s1369-7021(08)70119-6

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