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Cited by 205

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Negative Photoconductance in van der Waals Heterostructure-Based Floating Gate Phototransistor

Wang, Yu, Liu, Erfu, Gao, Anyuan, Cao, Tianjun, Long, Mingsheng, Pan, Chen, Zhang, Lili, Zeng, Junwen, Wang, Chenyu, Hu, Weida, Liang, Shi-Jun, Miao, Feng·2018·ACS Nano

Abstract

van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light–-matter interactions. However, most light-controlled phenomena and applications in the vdW heterostructures rely on positive photoconductance (PPC). Negative photoconductance (NPC) has not yet been reported in vdW heterostructures. Here we report the observation of the NPC in the ReS 2 /h-BN/MoS 2 vdW heterostructure-based floating gate phototransistor. The fabricated devices exhibit excellent performance of nonvolatile memory without light illumination. More interestingly, we observe a gate-tunable transition between the PPC and the NPC under the light illumination. The observed NPC phenomenon can be attributed to charge transfer between the floating gate and the conduction channel. Furthermore, we show that control of NPC through light intensity is promising in realization of light-tunable multibit memory devices. Our results may enable potential applications in multifunctional memories and optoelectronic devices.

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Crossref · 10.1021/acsnano.8b04885

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Metadata

Authors
Wang, Y., Liu, E., Gao, A., Cao, T., Long, M., Pan, C., Zhang, L., Zeng, J., Wang, C., Hu, W., Liang, S.-J., & Miao, F.
Venue
ACS Nano
Published
2018-08-17
Volume
12
Issue
9
Pages
9513-9520
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W2887137457
Cited by
205
References
2
FWCI
5.60
Type
journal article
Language
en
Open access
closed

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