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Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction
Abstract
Ultraviolet (UV) radiation has a variety of impacts including the health of humans, the production of crops, and the lifetime of buildings. Based on the photovoltaic effect, self-powered UV photodetectors can measure and monitor UV radiation without any power consumption. However, the current low photoelectric performance of these detectors has hindered their practical use. In our study, a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga 2 O 3 pn junction was generated by depositing a Sn-doped n-type Ga 2 O 3 thin film onto a p-type GaN thick film. The responsivity at 254 nm reached up to 3.05 A/W without a power supply and had a high UV/visible rejection ratio of R 254 nm / R 400 nm = 5.9 × 10 3 and an ideal detectivity at 1.69 × 10 13 cm·Hz 1/2 ·W –1, which is well beyond the level of previous self-powered UV photodetectors. Moreover, our device also has a low dark current (1.8 × 10 –11 A), a high I photo / I dark ratio (∼10 4 ), and a fast photoresponse time of 18 ms without bias. These outstanding performance results are attributed to the rapid separation of photogenerated electron–hole pairs driven by a high built-in electric field in the interface depletion region of the GaN/Sn:Ga 2 O 3 pn junction. Our results provide an improved and easy route to constructing high-performance self-powered UV photodetectors that can potentially replace traditional high-energy-consuming UV detection systems.
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Cited by
Kaur, D., & Kumar, M. (2021) · Advanced Optical Materials · doi:10.1002/adom.202002160 · Cited by 490
Li, S., Jang, J. H., Chung, W., Seung, H., Park, S. I., Ma, H., Pyo, W. J., Choi, C., Chung, D. S., Kim, D.-H., et al. (2023) · ACS Nano · doi:10.1021/acsnano.3c05178 · Cited by 70
Metadata
- Authors
- Guo, D., Su, Y., Shi, H., Li, P., Zhao, N., Ye, J., Wang, S., Liu, A., Chen, Z., Li, C., & Tang, W.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2018-11-28
- Volume
- 12
- Issue
- 12
- Pages
- 12827-12835
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2902798882
- Cited by
- 633
- References
- 0
- FWCI
- 14.80
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction. https://app.cochat.ai/papers/10.1021/acsnano.8b07997
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- Guo, D., Su, Y., Shi, H., Li, P., Zhao, N., Ye, J., Wang, S., Liu, A., Chen, Z., Li, C., & Tang, W. (2018). Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction. ACS Nano. https://doi.org/10.1021/acsnano.8b07997
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