The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Shape Evolution of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition
Abstract
Atmospheric-pressure chemical vapor deposition (CVD) is used to grow monolayer MoS 2 two-dimensional crystals at elevated temperatures on silicon substrates with a 300 nm oxide layer. Our CVD reaction is hydrogen free, with the sulfur precursor placed in a furnace separate from the MoO 3 precursor to individually control their heating profiles and provide greater flexibility in the growth recipe. We intentionally establish a sharp gradient of MoO 3 precursor concentration on the growth substrate to explore its sensitivity to the resultant MoS 2 domain growth within a relatively uniform temperature range. We find that the shape of MoS 2 domains is highly dependent upon the spatial location on the silicon substrate, with variation from triangular to hexagonal geometries. The shape change of domains is attributed to local changes in the Mo:S ratio of precursors (1:>2, 1:2, and 1:<2) and its influence on the kinetic growth dynamics of edges. These results improve our understanding of the factors that influence the growth of MoS 2 domains and their shape evolution.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Controlled Synthesis of Highly Crystalline MoS 2 Flakes by Chemical Vapor Deposition
Wang, X., Feng, H., Wu, Y., & Jiao, L. (2013) · Journal of the American Chemical Society · doi:10.1021/ja4013485 · Cited by 748
Cited by
Recent development of two-dimensional transition metal dichalcogenides and their applications
Choi, W., Choudhary, N., Han, G. H., Park, J., Akinwande, D., & Lee, Y. H. (2017) · Materials Today · doi:10.1016/j.mattod.2016.10.002 · Cited by 2,769
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures
Wang, S., Wang, X., & Warner, J. H. (2015) · ACS Nano · doi:10.1021/acsnano.5b00655 · Cited by 389
Self-citationLi, H., Li, Y., Aljarb, A., Shi, Y., & Li, L.-J. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00212 · Cited by 382
Eng, A. Y. S., Ambrosi, A., Sofer, Z., Šimek, P., & Pumera, M. (2014) · ACS Nano · doi:10.1021/nn503832j · Cited by 333
Metadata
- Authors
- Wang, S., Rong, Y., Fan, Y., Pacios, M., Bhaskaran, H., He, K., & Warner, J. H.
- Venue
- Chemistry of Materials
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-11-04
- Volume
- 26
- Issue
- 22
- Pages
- 6371-6379
- ISSN
- 0897-4756 (ISSN-L)
- 1520-5002
- OpenAlex
- W2316629727
- Cited by
- 873
- References
- 2
- FWCI
- 21.29
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wang, S., Rong, Y., Fan, Y., Pacios, M., Bhaskaran, H., He, K., & Warner, J. H. (2014). Shape Evolution of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition. Chemistry of Materials. https://doi.org/10.1021/cm5025662
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