The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Synthesis of Luminescent Thin-Film CdSe/ZnSe Quantum Dot Composites Using CdSe Quantum Dots Passivated with an Overlayer of ZnSe
Abstract
Electronic and chemical passivation of CdSe nanocrystals (quantum dots) has been achieved with a thin ZnSe overlayer grown in solution from trioctylphosphine selenide and diethylzinc. Layered particles with a [ZnSe/CdSe] ratio ranging from 0 to ∼5.0 were prepared and characterized by optical absorption spectroscopy, photoluminescence, high-resolution transmission electron microscopy, Auger electron spectroscopy, and X-ray scattering. The overgrown particles were crystalline and displayed band-edge absorption and emission characteristic of the initial CdSe nuclei. Thin-film quantum dot composites incorporating bare and overcoated CdSe nanocrystals in a ZnSe matrix were synthesized by electrospray organometallic chemical vapor deposition (ES-OMCVD). The photoluminescence spectra of the composites with bare CdSe dots were dominated by broad deep-level emission and the photoluminescence yield deteriorated with increasing deposition temperature. In contrast, the composites incorporating the overcoated dots showed sharp band-edge emission. The presence of a preformed ZnSe layer resulted in a dramatic enhancement of the band-edge photoluminescence yield (by 2 orders of magnitude). The photoluminescence properties of composites with the passivated dots were insensitive to deposition temperature over the range studied.
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Cites
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Metadata
- Authors
- Danek, M., Jensen, K. F., Murray, C. B., & Bawendi, M. G.
- Venue
- Chemistry of Materials
- Publisher
- American Chemical Society (ACS)
- Published
- 1996-01-01
- Volume
- 8
- Issue
- 1
- Pages
- 173-180
- ISSN
- 0897-4756 (ISSN-L)
- 1520-5002
- OpenAlex
- W2034056659
- Cited by
- 417
- References
- 1
- FWCI
- 9.12
- Type
- journal article
- Language
- en
- Open access
- closed
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