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Facile Synthesis of Highly π-Extended Heteroarenes, Dinaphtho[2,3-b:2‘,3‘-f]chalcogenopheno[3,2-b]chalcogenophenes, and Their Application to Field-Effect Transistors
Abstract
A facile three-step synthetic procedure for highly π-extended heteroarenes, dinaphtho[2,3- b:2‘,3‘- f ]thieno[3,2- b ]thiophene (DNTT) and dinaphtho[2,3- b:2‘,3‘- f ]selenopheno[3,2- b ]selenophene (DNSS), was established. Solution UV−vis spectra and electrochemistry indicated that they have relatively low-lying HOMO levels and large HOMO−LUMO energy gaps. OFET devices fabricated with evaporated thin-films of DNTT and DNSS showed excellent FET characteristics in air, and the highest field-effect mobility of DNTT- and DNSS-based OFETs is 2.9 and 1.9 cm 2 V -1 s -1, respectively.
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Metadata
- Authors
- Yamamoto, T., & Takimiya, K.
- Venue
- Journal of the American Chemical Society
- Publisher
- American Chemical Society (ACS)
- Published
- 2007-02-01
- Volume
- 129
- Issue
- 8
- Pages
- 2224-2225
- ISSN
- 0002-7863 (ISSN-L)
- 1520-5126
- OpenAlex
- W2062264802
- Cited by
- 898
- References
- 0
- FWCI
- 46.94
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Facile Synthesis of Highly π-Extended Heteroarenes, Dinaphtho[2,3-b:2‘,3‘-f]chalcogenopheno[3,2-b]chalcogenophenes, and Their Application to Field-Effect Transistors. https://app.cochat.ai/papers/10.1021/ja068429z
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- Yamamoto, T., & Takimiya, K. (2007). Facile Synthesis of Highly π-Extended Heteroarenes, Dinaphtho[2,3-b:2‘,3‘-f]chalcogenopheno[3,2-b]chalcogenophenes, and Their Application to Field-Effect Transistors. Journal of the American Chemical Society. https://doi.org/10.1021/ja068429z
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