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Cited by 226

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Silicon Nanowire Array Photoelectrochemical Cells

Goodey, Adrian P., Eichfeld, Sarah M., Lew, Kok-Keong, Redwing, Joan M., Mallouk, Thomas E.·2007·Journal of the American Chemical Society

Abstract

Silicon nanowire arrays were grown by vapor−liquid−solid growth from SiH 4 vapor at 500 °C, and tested as photocathodes in [Ru(bpy) 3 ] 2+ (bpy = 2,2‘-bipyridyl)/acetonitrile solutions. Si nanowires were grown in anodic aluminum oxide membranes by first electroplating 50 μm long Co wires capped with 250 nm gold segments in the pores and then reacting with SiH 4 . The resulting Si nanowires protruded 10−15 μm beyond the top surface of the membrane but were degeneratively doped, most likely by Al from the membrane. Nanowires grown in the same manner on Si(111)/Au substrates could be controllably doped p-type by addition of trimethylboron. These p-Si nanowire arrays gave a photovoltage of 220 mV in [Ru(bpy) 3 ] 2+ solution when illuminated by white light.

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Metadata

Authors
Goodey, A. P., Eichfeld, S. M., Lew, K.-K., Redwing, J. M., & Mallouk, T. E.
Venue
Journal of the American Chemical Society
Published
2007-09-25
Volume
129
Issue
41
Pages
12344-12345
ISSN
  • 0002-7863 (ISSN-L)
  • 1520-5126
OpenAlex
W2076079186
Cited by
226
References
1
FWCI
18.52
Type
journal article
Language
en
Open access
closed

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