The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Metallic Few-Layered VS2 Ultrathin Nanosheets: High Two-Dimensional Conductivity for In-Plane Supercapacitors
Abstract
With the rapid development of portable electronics, such as e-paper and other flexible devices, practical power sources with ultrathin geometries become an important prerequisite, in which supercapacitors with in-plane configurations are recently emerging as a favorable and competitive candidate. As is known, electrode materials with two-dimensional (2D) permeable channels, high-conductivity structural scaffolds, and high specific surface areas are the indispensible requirements for the development of in-plane supercapacitors with superior performance, while it is difficult for the presently available inorganic materials to make the best in all aspects. In this sense, vanadium disulfide (VS(2)) presents an ideal material platform due to its synergic properties of metallic nature and exfoliative characteristic brought by the conducting S-V-S layers stacked up by weak van der Waals interlayer interactions, offering great potential as high-performance in-plane supercapacitor electrodes. Herein, we developed a unique ammonia-assisted strategy to exfoliate bulk VS(2) flakes into ultrathin VS(2) nanosheets stacked with less than five S-V-S single layers, representing a brand new two-dimensional material having metallic behavior aside from graphene. Moreover, highly conductive VS(2) thin films were successfully assembled for constructing the electrodes of in-plane supercapacitors. As is expected, a specific capacitance of 4760 μF/cm(2) was realized here in a 150 nm in-plane configuration, of which no obvious degradation was observed even after 1000 charge/discharge cycles, offering as a new in-plane supercapacitor with high performance based on quasi-two-dimensional materials.
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Cites
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Projector augmented-wave method
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Cited by
Xie, J., Zhang, H., Li, S., Wang, R., Sun, X., Zhou, M., Zhou, J., Lou, X. W. (., & Xie, Y. (2013) · Advanced Materials · doi:10.1002/adma.201302685 · Cited by 3,079
Self-citationXie, J., Zhang, J., Li, S., Grote, F., Zhang, X., Zhang, H., Wang, R., Lei, Y., Pan, B., & Xie, Y. (2013) · Journal of the American Chemical Society · doi:10.1021/ja408329q · Cited by 2,350
Self-citationChatenet, M., Pollet, B. G., Dekel, D. R., Dionigi, F., Deseure, J., Millet, P., Braatz, R. D., Bazant, M. Z., Eikerling, M., Staffell, I., et al. (2022) · Chemical Society Reviews · doi:10.1039/d0cs01079k · Cited by 2,025
Gao, M.-R., Xu, Y.-F., Jiang, J., & Yu, S.-H. (2013) · Chemical Society Reviews · doi:10.1039/c2cs35310e · Cited by 1,610
Electrochemistry of Nanostructured Layered Transition-Metal Dichalcogenides
Chia, X., Eng, A. Y. S., Ambrosi, A., Tan, S. M., & Pumera, M. (2015) · Chemical Reviews · doi:10.1021/acs.chemrev.5b00287 · Cited by 894
Metadata
- Authors
- Feng, J., Sun, X., Wu, C., Peng, L., Lin, C., Hu, S., Yang, J., & Xie, Y.
- Venue
- Journal of the American Chemical Society
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-10-14
- Volume
- 133
- Issue
- 44
- Pages
- 17832-17838
- ISSN
- 0002-7863 (ISSN-L)
- 1520-5126
- OpenAlex
- W2168673268
- Cited by
- 1,143
- References
- 4
- FWCI
- 19.94
- Type
- journal article
- Language
- en
- Open access
- closed
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