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Porous Field-Effect Transistors Based on a Semiconductive Metal–Organic Framework
Abstract
Recently, the emergence of conductive metal–organic frameworks (MOFs) has given great prospects for their applications as active materials in electronic devices. In this work, a high-quality, free-standing conductive MOF membrane was prepared by an air–liquid interfacial growth method. Accordingly, field-effect transistors (FETs) possessing a crystalline microporous MOF channel layer were successfully fabricated for the first time. The porous FETs exhibited p-type behavior, distinguishable on/off ratios, and excellent field-effect hole mobilities as high as 48.6 cm 2 V –1 s –1, which is even comparable to the highest value reported for solution-processed organic or inorganic FETs.
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Cited by
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Dong, R., Zhang, T., & Feng, X. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.8b00056 · Cited by 710
Ma, X., Liu, H., Yang, W., Mao, G., Zheng, L., & Jiang, H.-L. (2021) · Journal of the American Chemical Society · doi:10.1021/jacs.1c05032 · Cited by 445
Zhou, S., Kong, X., Zheng, B., Huo, F., Strømme, M., & Xu, C. (2019) · ACS Nano · doi:10.1021/acsnano.9b04670 · Cited by 341
Xu, M., Li, D., Sun, K., Jiao, L., Xie, C., Ding, C., & Jiang, H. (2021) · Angewandte Chemie International Edition · doi:10.1002/anie.202104219 · Cited by 280
Metadata
- Authors
- Wu, G., Huang, J., Zang, Y., He, J., & Xu, G.
- Venue
- Journal of the American Chemical Society
- Publisher
- American Chemical Society (ACS)
- Published
- 2016-11-07
- Volume
- 139
- Issue
- 4
- Pages
- 1360-1363
- ISSN
- 0002-7863 (ISSN-L)
- 1520-5126
- OpenAlex
- W2545567368
- Cited by
- 490
- References
- 0
- FWCI
- 17.14
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wu, G., Huang, J., Zang, Y., He, J., & Xu, G. (2017). Porous Field-Effect Transistors Based on a Semiconductive Metal–Organic Framework. Journal of the American Chemical Society. https://doi.org/10.1021/jacs.6b08511
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