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Anisotropic Etching of Atomically Thin MoS2

Yamamoto, Mahito, Einstein, Theodore L., Fuhrer, Michael S., Cullen, William G.·2013·The Journal of Physical Chemistry C

Abstract

Exposure to oxygen at 300–340 °C results in triangular etch pits with uniform orientation on the surfaces of atomically thin molybdenum disulfide (MoS 2 ), indicating anisotropic etching terminating on lattice planes. The triangular pits grow laterally with oxidation time. The density of pits scarcely depends on oxidation time, temperature, and MoS 2 thickness but varies significantly from sample to sample, indicating that etching is initiated at native defect sites on the basal plane surface rather than activated by substrate effects such as charged impurities or surface roughness. Raman spectroscopy confirms that oxygen treatment produces no molybdenum oxide (MoO 3 ) below 340 °C. However, upon oxidation above 200 °C, the Raman A 1g mode upshifts and the linewidth decreases, indicating p-type doping of MoS 2 . Oxidation at 400 °C results in complete conversion to MoO 3 .

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Metadata

Authors
Yamamoto, M., Einstein, T. L., Fuhrer, M. S., & Cullen, W. G.
Venue
The Journal of Physical Chemistry C
Published
2013-11-20
Volume
117
Issue
48
Pages
25643-25649
ISSN
  • 1932-7447 (ISSN-L)
  • 1932-7455
OpenAlex
W2316680445
Cited by
215
References
4
FWCI
3.55
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Anisotropic Etching of Atomically Thin MoS2. https://app.cochat.ai/papers/10.1021/jp410893e
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Yamamoto, M., Einstein, T. L., Fuhrer, M. S., & Cullen, W. G. (2013). Anisotropic Etching of Atomically Thin MoS2. The Journal of Physical Chemistry C. https://doi.org/10.1021/jp410893e

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