The DOI matches its Crossref record; 48 of the 48 references it cites were found in a registry or an index.
Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2
Abstract
Growth of a uniform oxide film with a tunable thickness on two-dimensional transition metal dichalcogenides is of great importance for electronic and optoelectronic applications. Here we demonstrate homogeneous surface oxidation of atomically thin WSe2 with a self-limiting thickness from single- to trilayers. Exposure to ozone (O3) below 100 °C leads to the lateral growth of tungsten oxide selectively along selenium zigzag-edge orientations on WSe2. With further O3 exposure, the oxide regions coalesce and oxidation terminates leaving a uniform thickness oxide film on top of unoxidized WSe2. At higher temperatures, oxidation evolves in the layer-by-layer regime up to trilayers. The oxide films formed on WSe2 are nearly atomically flat. Using photoluminescence and Raman spectroscopy, we find that the underlying single-layer WSe2 is decoupled from the top oxide but hole-doped. Our findings offer a new strategy for creating atomically thin heterostructures of semiconductors and insulating oxides with potential for applications in electronic devices.
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Cites
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Cited by
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Metadata
- Authors
- Yamamoto, M., Dutta, S., Aikawa, S., Nakaharai, S., Wakabayashi, K., Fuhrer, M. S., Ueno, K., & Tsukagoshi, K.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-02-06
- Volume
- 15
- Issue
- 3
- Pages
- 2067-2073
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2320406738
- Cited by
- 258
- References
- 48
- FWCI
- 9.59
- Type
- journal article
- Language
- en
- Open access
- closed
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- Yamamoto, M., Dutta, S., Aikawa, S., Nakaharai, S., Wakabayashi, K., Fuhrer, M. S., Ueno, K., & Tsukagoshi, K. (2015). Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2. Nano Letters. https://doi.org/10.1021/nl5049753
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