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Insulator to Semimetal Transition in Graphene Oxide
Open accessAbstract
Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator−semiconductor−semimetal transitions with reduction. The apparent transport gap ranges from 10 to 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to an increased number of available hopping sites.
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Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
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Metadata
- Authors
- Eda, G., Mattevi, C., Yamaguchi, H., Kim, H., & Chhowalla, M.
- Venue
- The Journal of Physical Chemistry C
- Publisher
- American Chemical Society (ACS)
- Published
- 2009-08-11
- Volume
- 113
- Issue
- 35
- Pages
- 15768-15771
- ISSN
- 1932-7447 (ISSN-L)
- 1932-7455
- OpenAlex
- W1985662147
- Cited by
- 650
- References
- 1
- FWCI
- 17.55
- Type
- journal article
- Language
- en
- Open access
- green
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
