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Cited by 340

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Charge Recombination Kinetics in Dye-Sensitized Nanocrystalline Titanium Dioxide Films under Externally Applied Bias

Haque, Saif A., Tachibana, Yasuhiro, Klug, David R., Durrant, James R.·1998·The Journal of Physical Chemistry B

Abstract

The kinetics of charge recombination were determined following low intensity optical excitation of Ru II (2,2‘-bipyridyl-4,4‘dicarboxylate) 2 (NCS) 2 sensitized nanocrystalline TiO 2 films as a function of externally applied bias voltage V . These kinetics were found to be multiexponential. The median time ( t 50% ) for charge recombination was found to depend strongly upon bias voltage, reducing from t 50% ∼ 200 ms for V = 0 V versus Ag/AgCl to < 30 ns for V ≤ −500 mV. This reduction in t 50% was found to follow the equation t 50% ∝ exp( qV /1.7 k B T ). These results are consistent with the charge recombination kinetics being strongly dependent upon the accumulation of electrons in intraband/conduction band states of the TiO 2 film. For biases V ≤ −400 mV, the rate of charge recombination was found to exceed the rate of rereduction of the dye cation by an I - /I 3 - redox couple in solution.

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Metadata

Authors
Haque, S. A., Tachibana, Y., Klug, D. R., & Durrant, J. R.
Venue
The Journal of Physical Chemistry B
Published
1998-02-18
Volume
102
Issue
10
Pages
1745-1749
ISSN
  • 1520-5207 (ISSN-L)
  • 1520-6106
OpenAlex
W1994213559
Cited by
340
References
1
FWCI
25.32
Type
journal article
Language
en
Open access
closed

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