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Growth and Structure of Water on SiO2 Films on Si Investigated by Kelvin Probe Microscopy and in Situ X-ray Spectroscopies
Abstract
The growth of water on thin SiO2 films on Si wafers at vapor pressures between 1.5 and 4 Torr and temperatures between -10 and 21 degrees C has been studied in situ using Kelvin probe microscopy and X-ray photoemission and absorption spectroscopies. From 0 to 75% relative humidity (RH), water adsorbs forming a uniform film 4-5 layers thick. The surface potential increases in that RH range by about 400 mV and remains constant upon further increase of the RH. Above 75% RH, the water film grows rapidly, reaching 6-7 monolayers at around 90% RH and forming a macroscopic drop near 100%. The O K-edge near-edge X-ray absorption spectrum around 75% RH is similar to that of liquid water (imperfect H-bonding coordination) at temperatures above 0 degrees C and is ice-like below 0 degrees C.
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Ewing, G. E. (2004) · The Journal of Physical Chemistry B · doi:10.1021/jp040378+ · Cited by 112
Cited by
Interfacial Thermal Conductance of Transfer‐Printed Metal Films
Oh, D., Kim, S., Rogers, J. A., Cahill, D. G., & Sinha, S. (2011) · Advanced Materials · doi:10.1002/adma.201102994 · Cited by 77
Metadata
- Authors
- Verdaguer, A., Weis, C., Oncins, G., Ketteler, G., Bluhm, H., & Salmeron, M.
- Venue
- Langmuir
- Publisher
- American Chemical Society (ACS)
- Published
- 2007-08-16
- Volume
- 23
- Issue
- 19
- Pages
- 9699-9703
- ISSN
- 0743-7463 (ISSN-L)
- 1520-5827
- OpenAlex
- W2050839523
- Cited by
- 191
- References
- 1
- FWCI
- 4.10
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Growth and Structure of Water on SiO2 Films on Si Investigated by Kelvin Probe Microscopy and in Situ X-ray Spectroscopies. https://app.cochat.ai/papers/10.1021/la700893w
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- Verdaguer, A., Weis, C., Oncins, G., Ketteler, G., Bluhm, H., & Salmeron, M. (2007). Growth and Structure of Water on SiO2 Films on Si Investigated by Kelvin Probe Microscopy and in Situ X-ray Spectroscopies. Langmuir. https://doi.org/10.1021/la700893w
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