The DOI matches its Crossref record; 16 of the 16 references it cites were found in a registry or an index.
Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires
Abstract
Heterojunction and superlattice formation is essential for many potential applications of semiconductor nanowires in nanoscale optoelectronics. We have developed a hybrid pulsed laser ablation/chemical capor deposition (PLA-CVD) process for the synthesis of semiconductor nanowires with longitudinal ordered heterostructures. The laser ablation process generates a programmable pulsed vapor source, which enables the nanowire growth in a block-by-block fashion with a well-defined compositional profile along the wire axis. Single-crystalline nanowires with longitudinal Si/SiGe superlattice structure have been successfully synthesized. This unique class of heterostructured one-dimensional nanostructures holds great potential in applications such as light emitting devices and thermoelectrics.
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One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
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Metadata
- Authors
- Wu, Y., Fan, R., & Yang, P.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2002-01-19
- Volume
- 2
- Issue
- 2
- Pages
- 83-86
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2095253276
- Cited by
- 984
- References
- 16
- FWCI
- 52.61
- Type
- journal article
- Language
- en
- Open access
- closed
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