Anisotropic Etching of SiC Whiskers

Cambaz, Goknur Z.; Yushin, Gleb N.; Gogotsi, Yury; Lutsenko, Vadim G.

doi:10.1021/nl051858v

Cited by 103Silicon Carbide Semiconductor TechnologiesNanowire Synthesis and ApplicationsSilicon Nanostructures and Photoluminescence

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Anisotropic Etching of SiC Whiskers

Cambaz, Goknur Z., Yushin, Gleb N., Gogotsi, Yury, Lutsenko, Vadim G.·2006·Nano Letters

DOI 10.1021/nl051858v

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Abstract

We have demonstrated a method of producing nanoplatelets or complex well-ordered nanostructures from silicon carbide (SiC) whiskers. Preferential etching of SiC whiskers in a mixture of hydrofluoric and nitric acids (3:1 ratio) at 100 degrees C results in the selective removal of cubic SiC and the formation of complex structures resembling a pagoda architecture. Possible mechanisms governing selective etching are discussed. Reproducible results on SiC whiskers manufactured in different laboratories suggest that the self-patterning phenomena are common in SiC whiskers, and the same electroless etching procedure can be used to synthesize various complex nanostructures from more conventional nano- and microscale objects for use as building blocks in the fabrication of sensors, cellular probes, and electronic, optoelectronic, electromechanical, and other devices.

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Etching of SiC nanowires proceeds by alternating HF etching of SiO2 and HNO3 oxidation of SiC, forming etching pits.
“The evolution of etched SiC nanowires is as follow: firstly, the SiO2 layer on SiC nanowires was etched by HF. Then, the exposed SiC was gradually oxidized to SiO2 by HNO3. And, the obtained SiO2 was etched by HF. Ultimately, the last two steps were carried out alternately to form etching pits on the nanowires.”
From Defect-induced growth of MoS2 nanosheets on selectively etched SiC nanowires aerogel for efficient electrocatalytic hydrogen evolution (2025) · cites this paper as [37]

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Authors: Cambaz, G. Z., Yushin, G. N., Gogotsi, Y., & Lutsenko, V. G.
Affiliations: V.I. Vernadsky Institute of General and Inorganic Chemistry of the National Academy of Sciences of Ukraine (UA)
Corresponding author: Gogotsi, Yury
ORCID: Yushin, Gleb N.
Gogotsi, Yury
Venue: Nano Letters
Publisher: American Chemical Society (ACS)
Published: 2005-10-11
Volume: 6
Issue: 3
Pages: 548-551
ISSN: 1530-6984 (ISSN-L)
1530-6992
DOI: 10.1021/nl051858v
OpenAlex: W2016891014
Cited by: 103
References: 19
Citations by year: 2026: 2 · 2025: 7 · 2024: 5 · 2023: 6 · 2022: 5 · 2021: 8 · 2020: 4 · 2019: 8 · 2018: 8 · 2017: 3 · 2016: 3 · 2015: 4 · 2014: 7 · 2013: 3 · 2012: 6
FWCI: 3.80
Type: journal article
Language: en
Open access: closed
Locations: Nano Letters (publishedVersion)
PubMed (publishedVersion)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Nanowire Synthesis and Applications
Physical Sciences › Materials Science › Materials Chemistry › Silicon Nanostructures and Photoluminescence
Keywords: silicon carbide whiskers, anisotropic etching, selective etching, hydrofluoric acid, nitric acid, nanoplatelets, self-patterning, nanostructuring, etching mechanism

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Anisotropic Etching of SiC Whiskers

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