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III−V Nanowire Growth Mechanism: V/III Ratio and Temperature Effects

Dayeh, Shadi A., Yu, Edward T., Wang, Deli·2007·Nano Letters

Abstract

We have studied the dependence of Au-assisted InAs nanowire (NW) growth on InAs(111)B substrates as a function of substrate temperature and input V/III precursor ratio using organometallic vapor-phase epitaxy. Temperature-dependent growth was observed within certain temperature windows that are highly dependent on input V/III ratios. This dependence was found to be a direct consequence of the drop in NW nucleation and growth rate with increasing V/III ratio at a constant growth temperature due to depletion of indium at the NW growth sites. The growth rate was found to be determined by the local V/III ratio, which is dependent on the input precursor flow rates, growth temperature, and substrate decomposition. These studies advance understanding of the key processes involved in III-V NW growth, support the general validity of the vapor-liquid-solid growth mechanism for III-V NWs, and improve rational control over their growth morphology.

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Metadata

Authors
Dayeh, S. A., Yu, E. T., & Wang, D.
Venue
Nano Letters
Published
2007-07-04
Volume
7
Issue
8
Pages
2486-2490
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2039620565
Cited by
186
References
0
FWCI
11.66
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: III−V Nanowire Growth Mechanism: V/III Ratio and Temperature Effects. https://app.cochat.ai/papers/10.1021/nl0712668
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Dayeh, S. A., Yu, E. T., & Wang, D. (2007). III−V Nanowire Growth Mechanism: V/III Ratio and Temperature Effects. Nano Letters. https://doi.org/10.1021/nl0712668

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